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Ion Beam Synthesis and Optical Properties of Zn and Zno Nanocrystals in Sio2 and Caf2 Substrates

Published online by Cambridge University Press:  15 February 2011

Y.C. Liu
Affiliation:
Advanced Center for Optoelectronic Functional Materials Research, Northeast Normal University, Changchun 130024, PRC. Key Laboratory of Excited State Processes, CIOFMP-CAS, Changchun, China.
R. Mu
Affiliation:
Center for Photonic Materials and Devices, Fisk University, Nashville TN, USA
H.Y. Xu
Affiliation:
Key Laboratory of Excited State Processes, CIOFMP-CAS, Changchun, China.
Y.M. Lu
Affiliation:
Key Laboratory of Excited State Processes, CIOFMP-CAS, Changchun, China.
D.Z. Shen
Affiliation:
Key Laboratory of Excited State Processes, CIOFMP-CAS, Changchun, China.
X.W. Fan
Affiliation:
Key Laboratory of Excited State Processes, CIOFMP-CAS, Changchun, China.
D. O. Henderson
Affiliation:
Center for Photonic Materials and Devices, Fisk University, Nashville TN, USA
C.W. White
Affiliation:
Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TNUSA
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Abstract

Ion implantation was used to inject zinc ions into crystalline CaF2 and amorphous SiO2 substrates. Zn or ZnO nanoparticles were formed after annealing in a reducing (4% H2 + 96%Ar) or an oxidizing (10%O2 + 90% Ar ) atmosphere, respectively. When the sample was annealed in a reducing atmosphere, the absorption band at ∼ 5.3 eV for zinc implanted into SiO2 was attributed to zinc metal colloids. The absorption peak observed in the 4.3 – 4.7 eV region was due to the formation of ZnO nanocrystals, after the sample was annealed in an oxidizing environment. Both X-ray diffraction (XRD) and X-ray photospectroscopy (XPS) were used to confirm ZnO nanocrystal formation. For zinc implanted into CaF2, the as-formed ZnO nanocrystals were aligned with their [002] axes parallel to the [111] axis of the CaF2. Photoluminescence (PL) spectra showed UV and green emission from the zinc-implanted silica samples annealed under an oxygen atmosphere; however, no green emission was observed for ZnO formed in a CaF2 substrate. An additional emission was observed at ∼ 420 nm which might be due to F centers in CaF2 created by ion beam damage.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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