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Ion Bombardment Effect on the Properties of a-Si:H

Published online by Cambridge University Press:  21 February 2011

B. Drevillon  and
J. P. M. Schmitt
B. Drevillon
Affiliation:
Equipe Synthèse de Couches Minces pour 1'Energétique LPNHE – Ecole Polytechnique -91128 PALAISEAU (France)
J. P. M. Schmitt
Affiliation:
Equipe Synthèse de Couches Minces pour 1'Energétique LPNHE – Ecole Polytechnique -91128 PALAISEAU (France)
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Abstract

In a low pressure multipole plasma, the energy of the charged species impinging on the substrate can be varied electrostatically. Spectroscopic ellipsometry is used to study the film growth and the surface morphology. Hydrogen evolution is used to investigate the release of hydrogen from the amorphous network. Moderate energy ion bombardment (Eion ‰ 50 eV) is shown to favour the formation of homogeneous high density films with a sharp interface. Weak ion bombardment (Eion ‰ 20 eV) results in a microscopically rough surface. The material strucbural variations are evidenced by hydrogen evolution kinetics.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 417
Copyright
Copyright © Materials Research Society 1985

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