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Ion Channeling and Spectroscopic Ellipsometry Examinations of Thin-Film SiO2 /EPI-Si(001) Structures

Published online by Cambridge University Press:  25 February 2011

A. T. Fiory ,
P. K. Roy  and
G. E. Jellison
A. T. Fiory
Affiliation:
AT&T Bell Laboratories, Murray Hill NJ 07974
P. K. Roy
Affiliation:
AT&T Bell Laboratories, Allentown PA 18103
G. E. Jellison
Affiliation:
Oak Ridge National Laboratory, Oak Ridge TN 37831
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Abstract

Rutherford backscattering ion-channeling spectrometry (RBS) and 2-channel spectroscopic polarization modulation ellipsometry (2-C SPME) were combined in a study of 3- to 16-nm SiO2 films to discern possible differences between conventional MOS oxides, modified surface preparation, and stacked-oxide processes which combine chemical vapor deposition with furnace oxidation. An excess silicon scattering is observed by RBS, which suggests atomic displacements associated with interfacial roughness and strain in the crystalline Si. Ellipsometry observes an increase in refractive index with decreasing film thickness, which is consistent with interfacial roughness or Si strain. The various preparation methods for device-quality MOS oxides yielded essentially equivalent results and film densities close to bulk, fused SiO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 131
Copyright
Copyright © Materials Research Society 1992

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References

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