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Ion Implantation Induced Interdiffusion in Quantum Wells for Optoelectronic Device Integration

Published online by Cambridge University Press:  21 March 2011

L. Fu ,
H. H. Tan ,
M. I. Cohen ,
C. Jagadish ,
L. V. Dao ,
M. Gal ,
Na Li ,
Ning Li ,
X. Liu  and
W. Lu
...Show all authors
L. Fu
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia
H. H. Tan
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia
M. I. Cohen
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia
C. Jagadish
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia
L. V. Dao
Affiliation:
School of Physics, University of New South Wales, Sydney, NSW 2052, Australia
M. Gal
Affiliation:
School of Physics, University of New South Wales, Sydney, NSW 2052, Australia
Na Li
Affiliation:
Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai, China
Ning Li
Affiliation:
Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai, China
X. Liu
Affiliation:
Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai, China
W. Lu
Affiliation:
Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai, China
S. C. Shen
Affiliation:
Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai, China
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Abstract

Ion implantation induced intermixing of GaAs/AlGaAs and InGaAs/AlGaAs quantum wells was studied using low temperature photoluminescence. Large energy shifts were observed with proton implantation and subsequent rapid thermal annealing. Energy shifts were found to be linear as a function of dose for doses as high as ∼5×1016 cm−2. Proton implantation and subsequent rapid thermal annealing was used to tune the emission wavelength of InGaAs quantum well lasers as well as detection wavelength of GaAs/AlGaAs quantum well infrared photodetectors (QWIPs). Emission wavelength of lasers showed blue shift whereas detection wavelength of QWIPs was red shifted with intermixing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H10.6.1
Copyright
Copyright © Materials Research Society 2002

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