Hostname: page-component-848d4c4894-pftt2 Total loading time: 0 Render date: 2024-05-07T02:01:20.968Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion Implanted Dielectric Films for an Improved Optical and Electronic Silicon Photovoltaic Response

Published online by Cambridge University Press:  03 January 2013

Avi Shalav ,
Christian Henderson ,
Tom Ratcliff  and
Andrew Thomson
Avi Shalav
Affiliation:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200, Australia School of Engineering, College of Engineering and Computer Science, Australian National University, ACT 0200, Australia
Christian Henderson
Affiliation:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200, Australia School of Engineering, College of Engineering and Computer Science, Australian National University, ACT 0200, Australia
Tom Ratcliff
Affiliation:
School of Engineering, College of Engineering and Computer Science, Australian National University, ACT 0200, Australia
Andrew Thomson
Affiliation:
School of Engineering, College of Engineering and Computer Science, Australian National University, ACT 0200, Australia
Get access

Abstract

Over the past few years, ion implanters specifically developed for the high throughput required by the silicon photovoltaic industry, have become commercially available. Recent research and development has focused on the formation of doped surface regions, particularly the formation of selective emitters. In this study we explore two effects of ion implantation into a thermal silicon dioxide passivating/antireflection dielectric. We show evidence that the electronic and optical performance of the layer can be improved via the incorporation of charges created within the dielectric film and the creation of a graded refractive index, minimizing the surface recombination and reflection losses respectively.

Keywords

ion-implantationdielectricphotovoltaic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1493: Symposium E/H – Photovoltaic Technologies, Devices and Systems Based on Inorganic Materials, Small Organic Molecules and Hybrids , 2013 , pp. 105 - 110
Copyright
Copyright © Materials Research Society 2012 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Chunduri, S. K., Photon International 2010-11, 114–116 (2010).Google Scholar
Fujinami, M. and Chilton, N. B., Appl. Phys. Lett. 62 (10), 1131-1133 (1993).CrossRefGoogle Scholar
Townsend, P. D., Chandler, P. J. and Zhang, L., “Optical effects of ion implantation,” (Cambridge University Press, Cambridge, 1994).CrossRefGoogle Scholar
Weber, K. J. and Jin, H., Appl. Phys. Lett. 94 (6), 063509 (2009).CrossRefGoogle Scholar
Yoshino, M., Shinzato, Y. and Morinaga, M., Mater. Sci. Forum 449-452, 713–716 (2004).CrossRefGoogle Scholar
Hoex, B., Schmidt, J., van de Sanden, M. C. M. and Kessels, W. M. M., Proc. 33rd IEEE PVSC, 1-4 (2008).Google Scholar
Lowdermilk, W. H., Proc. of the Soc. of Photo-Optical Instrum. Eng. 387, 55–78 (1983).Google Scholar
Lipinski, M., Kaminski, A., Lelievre, J. F., Lemiti, M., Fourmond, E. and Zieba, P., in Phys. Stat. Solidi C 4(4), 1566–1569 (2007).CrossRefGoogle Scholar
Oleary, S. K., Johnson, S. R. and Lim, P. K., J. Appl.Phy. 82 (7), 3334–3340 (1997).CrossRefGoogle Scholar
Theiss, M., “Hard and Software for Optical Spectroscopy”. (Dr. Bernhard-Klein-Str. 110, 52078 Aachen, Germany), www.mtheiss.com (last accessed 08/11/2012).Google Scholar
Seol, K. S., Karasawa, T., Ohki, Y., Nishikawa, H. and Takiyama, M., Microelect. Eng. 36 (1–4), 193-195 (1997).CrossRefGoogle Scholar