Hostname: page-component-54dcc4c588-r5qjk Total loading time: 0 Render date: 2025-09-12T11:34:43.141Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion-Induced Mixing in Ni-Sio2Bilayers

Published online by Cambridge University Press:  25 February 2011

T. C. Banwell ,
M-A. Nicolet ,
P. J. Grunthaner  and
T. Sands
T. C. Banwell
Affiliation:
California Institute of Technology, Pasadena, California 91125
M-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, California 91125
P. J. Grunthaner
Affiliation:
Jet Propulsion Laboratory, Pasadena, California 91109
T. Sands
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, California 94720
Get access

Abstract

We report on our studies of Ni transport induced by 300 keV Xe irradiationof 25 nm Ni films evaporated on thermally grown SiO2 at Xefluences of 1013-1016 cm-2 and attemperatures of 300-750 K during irradiation. Cross-sectional TEM, andselective etching combined with 2 MeV He backscattering spectrometry andESCA were used to profile the Xe and Ni within the SiO2. At 300K, backscattering shows cascade mixing dominates, although only ~ 1/35 thatpredicted by cascade theory, with most of the Ni in the SiO2contained in a resolution limited peak adjacent to the SiO2interface. TEM shows that this Ni is contained in a 5 nm band, 5 nm belowthe interface as Ni oxide clusters. Examination of the satellite structureof the Ni 2p line by XPS also shows this band is predominantly Ni2+. At 750 K, the near-surface peak vanishes and only recoilimplantation is evident. Ni0 is evident by XPS in samples irradiated at 300K, though not at higher temperatures. We explain our results in terms ofphase separation during cooling of the collision cascade.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Mayer, J. W., Tsaur, B. Y., Lau, S. S., and Hung, L. S., Nucl. Instr. and Meth. 182/183, 1 (1981).Google Scholar
2. Paine, B. M. and Averback, R. S., to be published in Nucl. Instr. and Meth. B, March 1985.Google Scholar
3. Dzioba, S. and Kelly, R., Nucl, J.. Mat. 76, 175 (1978).Google Scholar
4. Christel, L. A., Gibbons, J. F., and Mylroie, S., Nucl. Instr. and Meth. 182/183, 187 (1981).Google Scholar
5. Cheng, Y. T., Van Rossum, M., Nicolet, M-A., and Johnson, W. L., Appl. Phys. Lett. 45, 185 (1984).Google Scholar
6. Johnson, W. L., Cheng, Y. T., Van Rossum, M., and Nicolet, M-A., (unpublished).Google Scholar
7. Banwell, T. C. and Nicolet, M-A. in, Ion Implantation and Ion Beam Processing of Materials, edited by Hubler, G. K., Holland, O. W., Clayton, C. R., and White, C. W., (Elsevier Science Pub. Co., New York, 1984), Mat. Res. Soc. Symp. Proc. Vol. 27, p. 109.Google Scholar
8. Biersack, J. P. and Ziegler, J. F. in, Ion Implantation Techniques, (Springer-Verlag, New York, 1982), p. 157.Google Scholar
9. Banwell, T., Liu, B.X., Golecki, I., and Nicolet, M-A., Nucl. Instr. and Meth. 209/210, 125 (1983).Google Scholar
10. Grunthaner, P. J., Vasquez, R. P., and Grunthaner, F. J., J. Vac. Sci. Technol. 17, 1045 (1980).Google Scholar
11. Shreter, U., So, F. C. T., Paine, B. M., and Nicolet, M-A. in, Ion Implantation and Ion Beam Processing of Materials, edited by Hubler, G. K., Holland, O. W., Clayton, C. R., and White, C. W., (Elsevier Science Pub. Co., New York, 1984), Mat. Res. Soc. Symp. Proc. Vol. 27, 109.Google Scholar
12. Banwell, T., Corngold, N. R., and Nicolet, M-A., (unpublished).Google Scholar
13. Elliot, R. P., Constitution of Binary Alloys, First Supplement, (McGraw-Hill, New York, 1965), p. 661.Google Scholar
14. Kim, K. S. and Davis, R. E., Electron, J.. Spectrosc. 1, 251 (1972/73).Google Scholar
15. Grunthaner, P. J., Ph.D. Thesis, California Institute of Technology, (1980).Google Scholar