Hostname: page-component-54dcc4c588-54gsr Total loading time: 0 Render date: 2025-10-03T01:55:24.181Z Has data issue: false hasContentIssue false

Ion-Plating Deposition of MgO Protective Layer for AC-PlasmaDisplay Panels

Published online by Cambridge University Press:  17 March 2011

Kazuo Uetani
Affiliation:
R&D Center, ShinMaywa Industries, Ltd., 6-107 Tajikano-cho, Nishinomiya, Hyogo 663-8001, Japan
Hiroshi Kajiyama
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 7-1-1 Omika-cho, Hitachi, Ibaraki 319-1292, Japan
Akira Kato
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 7-1-1 Omika-cho, Hitachi, Ibaraki 319-1292, Japan
Isao Tokomoto
Affiliation:
R&D Center, ShinMaywa Industries, Ltd., 6-107 Tajikano-cho, Nishinomiya, Hyogo 663-8001, Japan
Yasuhiro Koizumi
Affiliation:
R&D Center, ShinMaywa Industries, Ltd., 6-107 Tajikano-cho, Nishinomiya, Hyogo 663-8001, Japan
Koichi Nose
Affiliation:
R&D Center, ShinMaywa Industries, Ltd., 6-107 Tajikano-cho, Nishinomiya, Hyogo 663-8001, Japan
Yasushi Ihara
Affiliation:
R&D Center, ShinMaywa Industries, Ltd., 6-107 Tajikano-cho, Nishinomiya, Hyogo 663-8001, Japan
Ken-ichi Onisawa
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 7-1-1 Omika-cho, Hitachi, Ibaraki 319-1292, Japan
Tetsuroh Minemura
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 7-1-1 Omika-cho, Hitachi, Ibaraki 319-1292, Japan
Get access

Abstract

MgO thin films as a protective layer in plasma display panels (PDPs) weredeposited by an advanced ion-plating (AIP) apparatus that we had developed.The AIP method enables plasma operation at low-pressures of 10−3Pa. The MgO thin films were mainly (111) oriented with a small amount ofrandomly oriented textures. The preferred orientation of the films wasdependent on deposition conditions; oxygen content and substratetemperature. Fine columnar structures grew with sharp apexes at the filmsurface. Secondary electron emission coefficient from a film deposited bythe AIP method was higher than that by a conventional electron beamevaporation method. The MgO protective layer could be expected to improvePDPs by our AIP deposition.

Information

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Uchiike, H., Miura, K., Nakayama, N., Shinoda, T. and Fukuyama, Y.: IEEE Trans. Electron Devices ED–23, 1211 (1976).Google Scholar
2.Japanese patent, No.1560327.Google Scholar
3. Uetani, K., Kajiyama, H., Yamaguchi, T., Nose, K., Onisawa, K. and Minemura, T.: Mater. Trans., JIM 41, 1161 (2000).Google Scholar
4.JCPDS-card 75-0447 (1997).Google Scholar