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Ion-Projection Lithography for Submicron Modification ofMaterials

Published online by Cambridge University Press:  25 February 2011

G. Stengl ,
H. LÖSchner ,
W. Maurer  and
P. Wolf
G. Stengl
Affiliation:
FETEC, A 1070 Vienna, Austria
H. LÖSchner
Affiliation:
FETEC, A 1070 Vienna, Austria
W. Maurer
Affiliation:
FETEC, A 1070 Vienna, Austria
P. Wolf
Affiliation:
FETEC, A 1070 Vienna, Austria
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Abstract

Ion-Projection Lithography (IPL) is a future production technique forsubmicron electronic devices, wich combines the advantages of e-beam andX-ray lithography without having their disadvantages. Like electrons, ionscan be accelerated, focused and deflected, and as is the case with X-rays,scattering in resist layers is less pronounced as for e-beams. Experimentalresults of IPL obtained with an Ion-Projection-Lithography-Machine IPLM-01are presented: Ion images of self supporting masks ten times demagnifiedwith a geometrical resolution < 0.25 μm printed into organic andinorganic resist layers in high volume production oriented times.

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References

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