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Irregular Electron Transport Through a-Si:H Based Potential Barriers

Published online by Cambridge University Press:  01 January 1993

Norbert Bernhard ,
B. Frank ,
B. Movaghar  and
G.H. Bauer
Norbert Bernhard
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, F.R.Germany
B. Frank
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, F.R.Germany
B. Movaghar
Affiliation:
Institut für Theoretische Physik,Ruhr-Universität Bochum, D-4630 Bochum, F.R.Germany
G.H. Bauer
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, F.R.Germany
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Abstract

Irregularities in the current-voltage-characteristics of a-Si:H based potential barriers have been investigated experimentally, and are discussed theoretically with respect to different transport mechanisms. The investigated samples were different series of double and single barrier a-Si:H - a-Si1-xCx:H - heterostructures, as well as homogeneous samples without heterostructure barrier. Current-voltage-(I-V)-characteristics showing a wide variety of features, from complete smoothness of the curves, to bumps and even accidental step-like switching behaviour, as well as different forms of noise, were recorded at different temperatures. Resonant tunnelling as an explaining transport mechanism for the anomalies was excluded because of inconsistency between experiment and calculations partially including special amorphous features. Instead it is argued that all observed irregularities, i. e. bumps in I-V-curves, switching-like behaviour, and appearance of noise, are related to current transport via trap-assisted tunnelling through locally strongly confined transport paths, leading to the meta-stable formation, change and break-down of conductory filaments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 401
Copyright
Copyright © Materials Research Society 1993

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References

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