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Issues in Emissivity of Silicon

Published online by Cambridge University Press:  10 February 2011

S. Abedrabbo ,
J. C. Hensel ,
O. H. Gokce ,
F. M. Tong ,
B. Sopori ,
A. T. Fiory  and
N. M. Ravindra
S. Abedrabbo
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
J. C. Hensel
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
O. H. Gokce
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
F. M. Tong
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
B. Sopori
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
A. T. Fiory
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
N. M. Ravindra
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
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Abstract

The first qualitative results of the effects of backside surface roughness on the radiative properties of silicon as a function of temperature in the wavelength range of 1–20μm are presented in this study. These measurements have been made utilizing a spectral emissometer operating at near- and mid-IR spectral range. Surface roughness of the silicon wafer has been observed to lead to increased emissivities.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 525: Symposium W – Rapid Thermal & Integrated Processing VII , 1998 , 95
Copyright
Copyright © Materials Research Society 1998

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References

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