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I-V And C-V Characteristics of nGaAs-nInSb Heterojunctions Obtained by Pulsed Laser Deposition Technique

Published online by Cambridge University Press:  21 March 2011

Karapet E. Avdjian
Karapet E. Avdjian*
Affiliation:
Department of Semiconductor Electronics, Institute of Radiophysics & Electronics, National Ac. Sci. of Armenia, 1 Brs. Alikhanian st., Ashtarak, 378410, Armenia
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Abstract

Using pulsed laser deposition technique, nGaAs-nInSb heterojunctions (HJs) are obtained. Their electrical properties are studied. The Current-Voltage characteristics show that obtained HJs possess rectifying properties. The rectification coefficient depends strongly on the doping level of GaAs substrate. The linear dependence of C−2 (V) curve in Capacitance-Voltage characteristics, as well as the change of photo-response sign with wavelength, indicates that the HJs have abrupt interface, which is, to the best of our knowledge, a novel result for these HJ materials. The full number of interface states arising due to the lattice mismatch is determined which is in agreement with Hall measurements. Current-Voltage characteristics of obtained HJs are analogous to those of metal-semiconductor junction. Based on the obtained results the energy band diagrams of nGaAs-nInSb HJ is constructed taking into account the interface states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H9.25.1
Copyright
Copyright © Materials Research Society 2002

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References

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