Hostname: page-component-848d4c4894-p2v8j Total loading time: 0.001 Render date: 2024-05-21T05:34:59.298Z Has data issue: false hasContentIssue false
  • English
  • Français

IV-VI on Fluoride/Si Structures for IR-Sensor Array Applications

Published online by Cambridge University Press:  15 February 2011

A. Fach ,
C. Maissen ,
J. Masek ,
S. Teodoropol  and
H. Zogg
A. Fach
Affiliation:
AFIF at Swiss Federal Institute of Technology, Technopark ETH-Teil, Pfingstweidstr. 30, CH-8005 Zürich, Switzerland
C. Maissen
Affiliation:
AFIF at Swiss Federal Institute of Technology, Technopark ETH-Teil, Pfingstweidstr. 30, CH-8005 Zürich, Switzerland
J. Masek
Affiliation:
AFIF at Swiss Federal Institute of Technology, Technopark ETH-Teil, Pfingstweidstr. 30, CH-8005 Zürich, Switzerland
S. Teodoropol
Affiliation:
AFIF at Swiss Federal Institute of Technology, Technopark ETH-Teil, Pfingstweidstr. 30, CH-8005 Zürich, Switzerland
H. Zogg
Affiliation:
AFIF at Swiss Federal Institute of Technology, Technopark ETH-Teil, Pfingstweidstr. 30, CH-8005 Zürich, Switzerland
Get access

Abstract

Epitaxial narrow gap IV-VI layers on Si-substrates offer an alternate to Hg1−xCdxTe for IR-focal plane arrays with similar ultimate sensitivities. We report on the following improvements in reaching the goal of an easily producible fully monolithic IV-VI-on-active-Si IRFPA: (1) Up to now, compatibility with the Si-substrate was reached through use of a stacked CaF2/BaF2 buffer layer. This layer is replaced by a very thin CaF2 buffer only, which is more suitable for photolithographic processing. (2) Fine resolution wet etching of the IV-VI layers is much easier and reproducible with this new type of buffer. (3) Good homogeneity of cut-off wavelengths is obtained: For a 12 mm long linear Pb1−xSnxSe array with 10.2 μm cut-off wavelength at 95K, the variation in cut-off is smaller than 0.1 μm. (4) The thermal mismatch strain relaxes by dislocation glide even at cryogenic temperatures and after many thermal cycles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 299: Symposium C2 – Infrared Detectors--Materials, Processing, and Devices , 1994 , 279
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Zanio, K., Mattson, R., Chu, M., Terterian, S., SPIE Vol.1683, 1992, 179.Google Scholar
[2] Masek, J., Hoshino, T., Maissen, C., Zogg, H., Blunier, S., SPIE Vol.1735, 1992, 54.Google Scholar
[3] Zogg, H., Maissen, C., Masek, J., Hoshino, T., Blunier, S., Tiwari, A.N., Semicond. Sci. Technol. 6, C36, 1991.Google Scholar
[4] Zogg, H., Maissen, C., Masek, J., Hoshino, T., Blunier, S., Mat. Res. Soc. Symp. Proc. 216, 373, 1991.CrossRefGoogle Scholar
[5] Holloway, H., Logothetis, E.M., Wilkes, E., Appl. Phys. Lett. 21, 318, 1971.Google Scholar
[6] Holloway, H., Physics of Thin Films, Academic Press, Vol.11, p. 105.Google Scholar
[7] CRC Handbook of Physics and ChemistryGoogle Scholar
[8] Schowalter, L.J., Fathauer, R.W., CRC Crit. Rev. Solid State Mat. Sci. 15, 367, 1989.CrossRefGoogle Scholar
[9] Blunier, S., Zogg, H., Maissen, C., Tiwari, A.N., Overnay, R.M., Haefle, H., Buffat, P.A., Kostorz, G., Phys. Rev. Lett. 68, 3599, 1992.Google Scholar
[10] Maissen, C., Zogg, H., Blunier, S., Sultan, A., Teodoropol, S., Richmond, T., Tomm, J.W., Kostorz, G., Mat. Res. Soc. Symp. Proc. 263, 415, 1992.Google Scholar