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Kelvin Test Structure Modeling of Metal-Silicide-Silicon Contacts

Published online by Cambridge University Press:  10 February 2011

G. K. Reeves ,
A. S. Holland  and
P. W. Leech
G. K. Reeves
Affiliation:
Dept. of Communication and Electronic Eng, RMIT, Melbourne, Vic. 3001 Australia
A. S. Holland
Affiliation:
Dept. of Communication and Electronic Eng, RMIT, Melbourne, Vic. 3001 Australia
P. W. Leech
Affiliation:
Division of Manufacturing Science Technology, CSIRO, Clayton, Vic. 3169, Australia
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Abstract

Low resistance ohmic contacts for silicon devices commonly incorporate silicide materials as part of the contact. The electrical characterisation of ohmic contacts requires the use of various test structures such as the Cross Kelvin Resistor in order to determine the specific contact resistance ρc. This paper describes the results of using a three-dimensional finite element model of a Kelvin Resistor test structure in order to determine the influence of the electrical and geometrical parameters of a silicide-well on the magnitude of ρc. The same model of the test structure is further used to model the current density in the contact region. The results indicate that the presence of a silicide-well leads to reduced values of both ρc and the current density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 363
Copyright
Copyright © Materials Research Society 1998

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References

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