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Kinetic Monte Carlo Simulation of Dynamic Phenomena in thin Film Growth

Published online by Cambridge University Press:  10 February 2011

M. A. Gallivan
Affiliation:
Division of Engineering and Applied Science, California Institute of Technology, Pasadena, CA 91125, martha@dits.caltech.edu
R. M. Murray
Affiliation:
Division of Engineering and Applied Science, California Institute of Technology, Pasadena, CA 91125, martha@dits.caltech.edu
D. G. Goodwin
Affiliation:
Division of Engineering and Applied Science, California Institute of Technology, Pasadena, CA 91125, martha@dits.caltech.edu
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Abstract

In this paper we describe the response of a Kinetic Monte Carlo model to time-varying growth conditions. We vary temperature and partial pressure sinusoidally and identify behavior typical of low-dimensional nonlinear systems. In particular, the frequency content of the roughness response is sensitive to the presence of steps in the surface.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

1 Fichthorn, K. A. and Weinberg, W. H.. Theoretical foundations of dynamical Monte Carlo simulations. Journal of Chemical Physics, 95(2):10901096, 1991.10.1063/1.461138Google Scholar
2 Nayfeh, A. H. and Balachandran, B.. Applied Nonlinear Dynamics: Analytical, Computational, and Experimental Methods, page 261. John Wiley and Sons, New York, 1995.10.1002/9783527617548Google Scholar
3 Nayfeh, A. H. and Mook, D. T.. Nonlinear Oscillations, page 11. John Wiley and Sons, New York, 1979.Google Scholar
4 Rosenfeld, G., Lipkin, N. N., Wulfhekel, W., Kliewer, J., Morgenstern, K., Poelsema, B., and Comsa, G.. New concepts for controlled homoepitaxy. Applied Physics A, 61:455466, 1995.10.1007/BF01540247Google Scholar
5 Schinzer, S., Sokolowski, M., Biehl, M., and Kinzel, W.. Unconventional MBE strategies from computer simulations for optimized growth conditions. Physical Review B, 60(4):28932899, July 1999.10.1103/PhysRevB.60.2893Google Scholar