Published online by Cambridge University Press: 17 March 2011
In this work we investigate the ion beam synthesis of Sn and Sb clusters inthin oxides. 80 keV (fluences of 0.1-1 × 1016 cm−2) Snimplantation in 85 nm thick SiO2, followed by annealing(800-1000°C for 30-300 sec under Ar or N 2 dry ambient) in a rapid thermalprocessing (RTP) system, leads to the formation of two cluster bands, nearthe middle of the SiO2 layer and the Si/SiO2interface. In addition, big isolated clusters are randomly distributedbetween the two bands. Cluster-size distribution and cluster-crystallinityare related to implantation fluence and annealing time. Low energy (10-12keV) Sb and Sn implantation (fluences 2-5 × 1015 cm−2)leads to the formation of very uniform cluster-size distribution. Underspecific process conditions, only an interface cluster band is observed.