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Large Scale Synthesis of Silicon Nanowires by Laser Ablation

Published online by Cambridge University Press:  15 February 2011

Y.H. Tang ,
Y.F. Zhang ,
C.S. Lee ,
N. Wang ,
D.P. Yu ,
I. Bello  and
S.T. Lee
Y.H. Tang
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, apannale@cityu.edu.hk
Y.F. Zhang
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, apannale@cityu.edu.hk
C.S. Lee
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, apannale@cityu.edu.hk
N. Wang
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, apannale@cityu.edu.hk
D.P. Yu
Affiliation:
On leave from Department of Physics, Peking University, Beijing, China
I. Bello
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, apannale@cityu.edu.hk
S.T. Lee
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, apannale@cityu.edu.hk
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Abstract

Quasi one-dimensional materials have attracted considerable attention in recent years because of its potential to both fundamental physics and nanoelectronic applications. More recently, we have achieved large scale synthesis of silicon nanowires (SINW) at a high growth rate by laser ablation of Si target at 1200 °C. The laser source was a pulsed KrF excimer laser and the Si targets were made by pressing Si powder of 5 microns in size. 50 sccm Ar was used as a carrying gas flowing from the side near the Si target towards a water-cooled copper finger. Si nanowires have been grown with diameters ranging from 3 to 43 nm and several hundreds microns in length after 2 hours of laser ablation of Si target. The SLNWs were analyzed by XRD, Raman, EDS, TEM and HRTEM. Successful large scale synthesis of SINW by laser ablation extends the pulsed laser ablation method from depositing thin films to synthesis of nanowires.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 526: Symposium Y – Advances in Laser Ablation of Materials , 1998 , 73
Copyright
Copyright © Materials Research Society 1998

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References

1. Chrisey, D. B. and Hubler, G. K., Pulsed Laser Deposition of Thin Films, John Wiley & Sons Inc., New York, 1994, p.10 Google Scholar
2. Kroto, H. W., Heath, J. R., O'Brien, S. C., Curl, R. F. and Smalley, R. E., Nature 318, 62 (1985)Google Scholar
3. Niu, C., Lu, Y. Z., Lieber, C. M., Science 216, 334 (1993)Google Scholar
4. Dai, H., Wong, E. W., Lu, Y. Z., Fan, S. and Lieber, C. M., Nature 375, 769 (1995)Google Scholar
5. Guo, T., Nikolaev, P., Rinzler, A. G., Tomanek, D., Colbert, D. T. and Smalley, R. E., Chem. Phys. Lett. 243, 49 (1995)Google Scholar
6. Yu, D. P., Sun, X. S., Lee, C. S., Bello, I., Lee, S. T., Gu, H. D., Leung, K. M., Zhou, G. W., Dong, Z. F., and Zhang, Z., Appl. Phys. Lett. (in press)Google Scholar
4. Dai, H., Wong, E. W., Lu, Y. Z., Fan, S. and Lieber, C. M., Nature 375, 769 (1995)Google Scholar
7. Leobandung, E., Guo, L., Wang, Y. and Chou, S. Y., Appl. Phys. Lett. 67, 938 (1997)Google Scholar
8. Sanders, G. D. and Chang, Y. C., Appl. Phys. Lett. 60, 2525 (1992)Google Scholar
9. Ono, T., Saitoh, H. and Esashi, M., Appl. Phys. Lett. 70, 1852 (1997)Google Scholar
10. Zhang, Y. F., Tang, Y. H., Wang, N., Yu, D. P., Lee, C. S., Bello, I. and Lee, S. T., Appl. Phys. Lett. 72, 1835 (1998)Google Scholar
11. Wang, N., Tang, Y. H., Zhang, Y. F., Yu, D. P., Lee, C. S., Bello, I. and Lee, S. T., Chem. Phys. Lett. 283, 368 (1998)Google Scholar