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Laser Ablation of Highly Oriented Cdse Thin Films and Cdte/Cdse Multilayers on Silicon Substrate

Published online by Cambridge University Press:  15 February 2011

M. Ambrico ,
R. Martino ,
D. Smaldone ,
V. Capozzi ,
G. Lorusso ,
G. Perna ,
A. Giardini  and
A. Mele
M. Ambrico
Affiliation:
C.N.R., Istituto per i Materiali Speciali, Area della Ricerca di Potenza- Via S.Loja 1-85050
R. Martino
Affiliation:
C.N.R., Istituto per i Materiali Speciali, Area della Ricerca di Potenza- Via S.Loja 1-85050
D. Smaldone
Affiliation:
C.N.R., Istituto per i Materiali Speciali, Area della Ricerca di Potenza- Via S.Loja 1-85050
V. Capozzi
Affiliation:
Tito Scalo (PZ) (Italy), Dipartimento di Fisica and Unità INFM dell’ Università di Bari, (Italy) - ViaAmendola 173 I-70126 Bari (Italy)
G. Lorusso
Affiliation:
Tito Scalo (PZ) (Italy), Dipartimento di Fisica and Unità INFM dell’ Università di Bari, (Italy) - ViaAmendola 173 I-70126 Bari (Italy)
G. Perna
Affiliation:
Tito Scalo (PZ) (Italy), Dipartimento di Fisica and Unità INFM dell’ Università di Bari, (Italy) - ViaAmendola 173 I-70126 Bari (Italy)
A. Giardini
Affiliation:
Dipartimento di Chimica Université “La Sapienza”, P.le A.Moro 5 1-00185 Roma(Italy)
A. Mele
Affiliation:
Dipartimento di Chimica Université “La Sapienza”, P.le A.Moro 5 1-00185 Roma(Italy)
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Abstract

Laser ablation technique has been successfully used for the deposition of CdSe and CdTe/CdSe multilayers on Si(100) and Si(l11) substrates. X-ray analysis showed that CdSe/Si films were highly oriented. Their orientation changed from (100) to (002) by varying the substrate temperature from 473 to 673K. High orientation was also obtained on multilayered polycrystalline structures of CdSe and CdTe on Si(lll). Photoluminescence experiments have also been carried out on the deposited films.

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References

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