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Laser Recrystallization and 3D Integration

Published online by Cambridge University Press:  25 February 2011

J.P. Colinge
J.P. Colinge*
Affiliation:
CNET, BP98, 38243 Meylan, France
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Abstract

There are various methods for producing device-worthy Silicon-on-Insulatorfilms, most, however, are unsuitable for fabrication of 3D integratedstructures. The laser recrystallization technique is currently the only onewhich has produced single-crystal devices for 3D ICs. Improvements on thistechnique have been such that defects such as grain boundaries can belocalized and even eliminated. High speed CMOS circuits with VLSI featureshave been realized as well as new devices which take advantage of the 3Darrangement of vertically integrated structures. Although 3D integration isstill in the early stages of development, it has already opened up newperspectives for applications such as high speed circuits, dense memories,and sensors.

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