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LATTICE MATCHING IN HgCdTe-CdZnTe HETEROJUNCTIONS

Published online by Cambridge University Press:  28 February 2011

T. Maekawa ,
T. Saito ,
M. Yoshikawa  and
H. Takigawa
T. Maekawa
Affiliation:
Infrared Devices Laboratory, FUJITSU LABORATORIES LTD., 10-1 Wakamiya-Morinosato Atsugi 243-01 Japan
T. Saito
Affiliation:
Infrared Devices Laboratory, FUJITSU LABORATORIES LTD., 10-1 Wakamiya-Morinosato Atsugi 243-01 Japan
M. Yoshikawa
Affiliation:
Infrared Devices Laboratory, FUJITSU LABORATORIES LTD., 10-1 Wakamiya-Morinosato Atsugi 243-01 Japan
H. Takigawa
Affiliation:
Infrared Devices Laboratory, FUJITSU LABORATORIES LTD., 10-1 Wakamiya-Morinosato Atsugi 243-01 Japan
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Abstract

An etch pit study has been made on misfit dislocations in (111) HgCdTe-CdZnTe heterojunctions grown by liquid phase epitaxy. It was shown that misfit dislocations were localized at the original surface of the substrate, because Zn diffused into the epilayer during epitaxial growth prevents movement of dislocations. For lattice matching between Hg0 7Cd0.3Te and Cd1−yZnyTe, the optimum ZnTe mole fraction of Cd1−yZnyTe was found to be 2.9%.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 109
Copyright
Copyright © Materials Research Society 1986

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References

Refferences

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