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Lattice Mismatch Effects in Gaas Epitaxy on Si and GaP

Published online by Cambridge University Press:  26 February 2011

D. Gerthsen ,
F.A. Ponce ,
G.B. Anderson  and
H.F. Chung
D. Gerthsen
Affiliation:
Xerox Palo Alto Research Center 3333 Coyote Hill Road, Palo Alto, Calif. 94304
F.A. Ponce
Affiliation:
Xerox Palo Alto Research Center 3333 Coyote Hill Road, Palo Alto, Calif. 94304
G.B. Anderson
Affiliation:
Xerox Palo Alto Research Center 3333 Coyote Hill Road, Palo Alto, Calif. 94304
H.F. Chung
Affiliation:
Xerox Palo Alto Research Center 3333 Coyote Hill Road, Palo Alto, Calif. 94304
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Abstract

GaAs has been grown on (100) and (111) Si and GaP substrates by MOCVD during the same run at a substrate temperature of 550°C. The defect structure of the interface and the epitaxial GaAs layers has been analysed by transmission electron microscopy (TEM). Depending on the substrate type and orientation different defects and defect orientations were observed which can be attributed to different types of misfit dislocations and the thermal mismatch between the two materials.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 122: Symposium I – Interfacial Structure, Properties, and Design , 1988 , 21
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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