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Light Ion Irradiation Creep of SCS-6 Silicon Carbide Fibers in the Temperature Range 450 – 1100°C

Published online by Cambridge University Press:  15 February 2011

R. Scholz  and
H. Pasic
R. Scholz
Affiliation:
Commission of the European Community, JRC, 21020 Ispra (Va), TP 202, Italy
H. Pasic
Affiliation:
Ohio University, Mechanical Engineering Department, Athens, OH 45701, USA
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Abstract

Creep tests were conducted in torsion on Textron SCS-6™ silicon carbide (SiC) fibers during irradiation with light ions in the temperature range 450-1100°C up to doses of 0.06 dpa. The fibers, produced by chemical vapor deposition (CVD), should be representative of a SiC/SiC composite matrix produced by chemical vapor infiltration (CVI).

For temperatures between 450 and 600°C, the irradiation creep curves were characterised by long lasting strain transients during which the creep rate slowed down before reaching approximately steady state values. On a decrease in temperature the creep rate increased.

For temperatures between 900 and 1100°C, the transient creep regime was negligible. The creep rates reached constant values shortly after starting the irradiation and increased with temperature. The activation energy was E = 0.55±0.15 eV.

The results are discussed in terms of concentration and mobility of point defects and the change of these quantities with temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 279
Copyright
Copyright © Materials Research Society 1999

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