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Light Sensitive Polymer Thin Film Transistors Based on BAS-PPE

  • Yifan Xu (a1), Paul R. Berger (a1), James N. Wilson (a2) and Uwe H.F. Bunz (a2)
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The photoresponse of polymer field effect transistors (PFETs) based on the 2,5- bis(dibutylaminostyryl)-1,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl)benzene terpolymer (BAS-PPE) is investigated. BAS-PPE is a photoluminescent conducting polymer with a bandgap of 2.25 eV. The BAS-PPE PFETs were fabricated using an open coplanar configuration and light is illuminated onto the top side of the PFETs. A sweep of VDS demonstrates that IDS saturation is suppressed during illumination, which suggests that pinch-off can not be reached since the injection of photo-generated carriers continues unabated. Also, with incident light, the channel can not be turned off, even at high positive gate biases, due to the accumulation of photo- generated carriers. A sweep of VDS also shows that BAS-PPE can act as a p-type polymer and favors hole injection and transport.

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a)Author to whom correspondence should be addressed. Also at: Department of Physics, Smith Laboratory, 174 W. 18th Avenue, Columbus, OH 43210; Electronic mail: pberger@ieee.org
References
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