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Light-Induced Metastable Defects in a-Si:H: Towards an Understanding

Published online by Cambridge University Press:  28 February 2011

Martin Stutzmann ,
Warren B. Jackson  and
Chuang Chuang Tsai
Martin Stutzmann
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
Warren B. Jackson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
Chuang Chuang Tsai
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

The dependence of the creation and the annealing of metastable dangling bonds in hydrogenated amorphous silicon on various material parameters will be discussed in the context of a recently proposed model. After a brief review of the kinetic behaviour governing defect creation and annealing in undoped a- Si:H, a number of special cases will be analyzed: the influence of alloying with O, N, C, and Ge, changes introduced by doping and compensation, and the role of mechanical stress. Finally, possibilities to increase the stability of a-Si:H based devices will be examined.

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