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Limited Reaction Processing

Published online by Cambridge University Press:  28 February 2011

James F. Gibbons ,
C. M. Gronet ,
J. C. Sturm ,
C. King ,
K. Williams ,
S. Wilson ,
S. Reynolds ,
D. Vook ,
M. Scott  and
R. Hull
...Show all authors
James F. Gibbons
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
C. M. Gronet
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
J. C. Sturm
Affiliation:
Princeton University, EE Department, Princeton, NJ 08544
C. King
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
K. Williams
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
S. Wilson
Affiliation:
Charles Evans & Associates, San Mateo, CA 94402
S. Reynolds
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
D. Vook
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
G. Reid
Affiliation:
Hewlett-Packard Materials Characterization Laboratory, Palo Alto, CA 94304
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Abstract

Limited reaction processing (LRP), a new technique which provides precise control of thermally driven surface reactions, was used to grow multilayer structures composed of semiconductors and insulators. Results are presented for group IV-based materials including epitaxial Si, SiGe alloys, SiO2, and polysilicon. III–V materials such as GaAs, AlGaAs, and InGaAs have also been successfully grown. A number of diagnostic techniques were used to define the advantages and capabilities of LRP, including TEM, SIMS and AES. In addition, some preliminary device results are presented.

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Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 629
Copyright
Copyright © Materials Research Society 1987

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References

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