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Limiting Steps at Low Temperature in Direct Writing of Al on Si From Tma

Published online by Cambridge University Press:  26 February 2011

J. Flicstein ,
J.E. Bouree ,
J.F. Bresse  and
A.M. Pougnet
J. Flicstein
Affiliation:
CNET - Laboratoire de Bagneux, 92220 BAGNEUX - FRANCE
J.E. Bouree
Affiliation:
Laboratoire de Physique des Solides - 92195 MEUDON - FRANCE
J.F. Bresse
Affiliation:
CNET - Laboratoire de Bagneux, 92220 BAGNEUX - FRANCE
A.M. Pougnet
Affiliation:
Laboratoire de Physique des Solides - 92195 MEUDON - FRANCE
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Abstract

The rates of aluminum line growth, assisted by photolysis, in the normal direction to the Si (100) substrate, indicate that, in a trimethyl-aluminum + hydrogen mixture, only the change in the TMA flux and the UV laser power can play a determinant role. Possible explanation is based on the generated methyl radical “blocking” action leading to a self-limiting deposition rate, as opposed to the enhancement of methyl desorption by hydrogenation to methane. It is shown that dilution by hydrogen decreases the carbon contamination in aluminum line.

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References

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