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The limits of patterning in X-ray lithography

Published online by Cambridge University Press:  15 February 2011

F. Cerrina
F. Cerrina*
Affiliation:
Electrical and Computer Engineering University of Wisconsin - Madison
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Abstract

We show how the imaging process in proximity X-ray lithography is capable of reaching the sub-100 nm range. However, The use of proximity X-ray lithography is dependent on the mask to form the correct image of the pattern. The joint development of electron beam lithography patterning tools with high-placement accuracy, of a better understanding of the mask mechanical response and of new aligners, clearly indicates that the goal of using X-ray lithography for nanolithography applications is reachable.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 380: Symposium D – Materials–Fabrication and Patterning at the Nanoscale , 1995 , 173
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

[1] Guo, Z.Y. and Cerrina, F., IBM Journal of Research and Development, 37, 331 (1995)Google Scholar
[2] Ocola, L. and Cerrina, F., Journ. Vac. Sci. and Techn., B11, 2839 (1993)Google Scholar
[3] Guo, J.Z.Y., Leonard, Q., Cerrina, F., DiFabrizio, E.; Luciani, L., Gentili, M. and Gerold, D., Journ. Vac. Sci. and Techn., B10(6), 3150–3154 (1992)Google Scholar
[4] Gentili, M., DiFabrizio, E., Grella, L., Baciocchi, M., Mastrogiacomo, L., Maggiora, R., Xiao, J. and Cerrina, F., Journ. Vac. Sci. and Techn., B12 (1994)Google Scholar
[5] Khan, M., Mohammad, L., Ocola, L., Xiao, J. and Cerrina, F., Journ. Vac. Sci. and Techn., B12 Google Scholar
[6] Koek, B. H., Chisholm, T., Somers, J., and Davey, J. Romijn, J. and Run, A. J., Journ. Vac. Sci. and Techn., B12, 3409, (1994)Google Scholar
[7] Lenius, P., Engelstad, R., Palmer, S., Brodsky, E. and Cerrina, F., Journ. Vac. Sci. and Techn., B8(6), 1570–1574 (1990)Google Scholar
[8] Laird, D.L., Laudon, M.F. and Engelstad, R.L., Journ. Vac. Sci. and Techn., B11(6), 2953–2957 (1993)Google Scholar
[9] Guo, J.Z.Y., Xiao, J. and Cerrina, F., SPIE Proc., 1924, 320–334 (1993)Google Scholar
[10] Chen, A. et al., SPIE, to be publishedGoogle Scholar
[11] Cerrina, F., Engelstad, R. and K. to be published.Google Scholar
[12] Chen, G., Wallace, J. and Cerrina, F., Japan. Journ. Appl. Phys., 32, 5977–5981 (1993)Google Scholar
[13] Smith, H.I., private communicationGoogle Scholar