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Lithium Stability and Diffusion In a-Si:H

Published online by Cambridge University Press:  21 February 2011

Wolfhard Beyer ,
Jörg Herion ,
Heribert Hagner  and
Uwe Zastrow
Wolfhard Beyer
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Juelich, D-5170 Juelich, Germany
Jörg Herion
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Juelich, D-5170 Juelich, Germany
Heribert Hagner
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Juelich, D-5170 Juelich, Germany
Uwe Zastrow
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Juelich, D-5170 Juelich, Germany
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Abstract

SIMS measurements of implanted Li in (doped and undoped) a-Si:H, a-Si and a-Si:H alloys are discussed. The results suggest basically the same Li diffusion process in p- and n-type a-Si:H with negatively charged acceptors or dangling bonds acting as traps for the positively charged diffusing Li ions. Li is less stable in a-Si than in a-Si:H; Li stability in a-Si:H is enhanced at high concentrations of implanted Li. Both diffusion and stability are modified by doping gradient-related electric fields.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 437
Copyright
Copyright © Materials Research Society 1992

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References

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