Hostname: page-component-7dd5485656-j7khd Total loading time: 0 Render date: 2025-10-31T04:57:47.340Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Temperature Crystal Growth and Characterization of Cd0.9Zn0.1Te for Radiation Detection Applications

Published online by Cambridge University Press:  12 October 2011

Ramesh M. Krishna ,
Timothy C. Hayes ,
Peter G. Muzykov  and
Krishna C. Mandal
Ramesh M. Krishna
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA
Timothy C. Hayes
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA
Peter G. Muzykov
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA
Krishna C. Mandal
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA
Get access

Abstract

Cd0.9Zn0.1Te (CZT) detector grade crystals were grown from zone refined Cd, Zn, and Te (7N) precursor materials, using the tellurium solvent method. These crystals were grown using a high temperature vertical furnace designed and installed in our laboratory. The furnace is capable of growing up to 8” diameter crystals, and custom pulling and ampoule rotation functions using custom electronics were furnished for this setup. CZT crystals were grown using excess Te as a solvent with growth temperatures lower than the melting temperatures of CZT (1092°C). Tellurium inclusions were characterized through IR transmittance maps for the grown CZT ingots. The crystals from the grown ingots were processed and characterized using I-V measurements for electrical resistivity, thermally stimulated current (TSC), and electron beam induced current (EBIC). Pulse height spectra (PHS) measurements were carried out using a 241 Am (59.6 keV) radiation source, and an energy resolution of ~4.2% FWHM was obtained. Our investigation demonstrates high quality detector grade CZT crystals growth using this low temperature solvent method.

Keywords

semiconductingII-VIcrystal growth

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1341: Symposium U – Nuclear Radiation Detection Materials , 2011 , mrss11-1341-u02-03
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Egarievwea, S. U., Chena, K. T., Burger, A., James, R. B. & Lissec, C. M., Detection and Electrical Properties of CdZnTe Detectors at Elevated Temperatures. J. X-ray Sci. and Tech. 6, 309–315 (1996).Google Scholar
2. Chattopadhyaya, K., Fetha, S., Chena, H., , A. B. & Sub, C.-H., Characterization of semi-insulating CdTe crystals grown by horizontal seeded physical vapor transport. Journal of Crystal Growth 191, 377–385 (1998).Google Scholar
3. Mandal, K. C., Muzykov, P. G., Krishna, R., Hayes, T. & Sudarshan, T. S., Thermally stimulated current and high temperature resistivity measurements of 4H semi-insulating silicon carbide. Solid State Communications 151, 532–535 (2011).Google Scholar
4. Muzykov, P. G., Krishna, R., Das, S., Hayes, T. & Sudarshan, T. S., Characterization of 4H semi-insulating silicon carbide single crystals using electron beam induced current. Materials Letters 65, 911–914 (2011).Google Scholar
5. Krsmanovic, N., Lynn, K. G., Weber, M. H., Tjossem, R. & Gessmann, T., Electrical compensation in CdTe and CdZnTe by intrinsic defects. Phys. Rev. B 62, R16279–R16282 (2000).Google Scholar
6. Soundararajan, R., Lynn, K. G., Awadallah, S., Szeles, C. & Wei, S.-H., Study of defect levels in CdTe using thermoelectric effect spectroscopy. Journal of Electronic Materials 25, 1333–1340 (2006).Google Scholar
7. Maximenko, S., Soloviev, S., Cherednichenko, D. & Sudarshan, T., Electron-beam-induced current observed for dislocations in diffused 4H-SiC P–N diodes. Appl. Phys. Lett. 84, 1576 (2004).Google Scholar
8. Kargar, A., Jones, A. M., McNeil, W. J., Harrison, M. J. & McGregor, D. S., CdZnTe Frisch collar detectors for gamma-ray spectroscopy. Nuclear Instruments and Methods in Physics Research A 558, 497–503 (2006).Google Scholar