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Low Temperature Crystal Growth and Characterization of Cd0.9Zn0.1Te for Radiation Detection Applications

  • Ramesh M. Krishna (a1), Timothy C. Hayes (a1), Peter G. Muzykov (a1) and Krishna C. Mandal (a1)
Abstract
ABSTRACT

Cd0.9Zn0.1Te (CZT) detector grade crystals were grown from zone refined Cd, Zn, and Te (7N) precursor materials, using the tellurium solvent method. These crystals were grown using a high temperature vertical furnace designed and installed in our laboratory. The furnace is capable of growing up to 8” diameter crystals, and custom pulling and ampoule rotation functions using custom electronics were furnished for this setup. CZT crystals were grown using excess Te as a solvent with growth temperatures lower than the melting temperatures of CZT (1092°C). Tellurium inclusions were characterized through IR transmittance maps for the grown CZT ingots. The crystals from the grown ingots were processed and characterized using I-V measurements for electrical resistivity, thermally stimulated current (TSC), and electron beam induced current (EBIC). Pulse height spectra (PHS) measurements were carried out using a 241Am (59.6 keV) radiation source, and an energy resolution of ~4.2% FWHM was obtained. Our investigation demonstrates high quality detector grade CZT crystals growth using this low temperature solvent method.

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1. S. U. Egarievwea , K. T. Chena , A. Burger , R. B. James & C. M. Lissec , Detection and Electrical Properties of CdZnTe Detectors at Elevated Temperatures. J. X-ray Sci. and Tech. 6, 309315 (1996).

2. K. Chattopadhyaya , S. Fetha , H. Chena , A. B . & C.-H. Sub , Characterization of semi-insulating CdTe crystals grown by horizontal seeded physical vapor transport. Journal of Crystal Growth 191, 377385 (1998).

3. K. C. Mandal , P. G. Muzykov , R. Krishna , T. Hayes & T. S. Sudarshan , Thermally stimulated current and high temperature resistivity measurements of 4H semi-insulating silicon carbide. Solid State Communications 151, 532535 (2011).

4. P. G. Muzykov , R. Krishna , S. Das , T. Hayes & T. S. Sudarshan , Characterization of 4H semi-insulating silicon carbide single crystals using electron beam induced current. Materials Letters 65, 911914 (2011).

5. N. Krsmanovic , K. G. Lynn , M. H. Weber , R. Tjossem & T. Gessmann , Electrical compensation in CdTe and CdZnTe by intrinsic defects. Phys. Rev. B 62, R16279R16282 (2000).

7. S. Maximenko , S. Soloviev , D. Cherednichenko & T. Sudarshan , Electron-beam-induced current observed for dislocations in diffused 4H-SiC P–N diodes. Appl. Phys. Lett. 84, 1576 (2004).

8. A. Kargar , A. M. Jones , W. J. McNeil , M. J. Harrison & D. S. McGregor , CdZnTe Frisch collar detectors for gamma-ray spectroscopy. Nuclear Instruments and Methods in Physics Research A 558, 497503 (2006).

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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
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