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Low Temperature Growth of Nanocrystalline Silicon From SiF4 + SiH4

Published online by Cambridge University Press:  10 February 2011

Yu Chen ,
M. Taguchi  and
S. Wagner
Yu Chen
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, New Jersey 08544
M. Taguchi
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, New Jersey 08544
S. Wagner
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, New Jersey 08544
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Abstract

The electrical conductivity of nc-Si films grown from SiF4 and H2 with constant arsenic doping rises from 10-5 to 10 Scm-1 as the thickness rises from ˜ 0.1 to 1 μm. This variation demonstrates the strong influence of film structure on conductivity. We show that the conductivity of undoped nc-Si films of constant thickness can be varied by adding SiH4 to the SiF4 and H2 source gas.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 103
Copyright
Copyright © Materials Research Society 1997

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