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Low Temperature Processing for Multilevel Interconnection and Packaging

Published online by Cambridge University Press:  25 February 2011

T.-M. Lu ,
J. F. McDonald ,
S. Dabral ,
G.-R. Yang ,
L. You  and
P. Bai
T.-M. Lu
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
J. F. McDonald
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
S. Dabral
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
G.-R. Yang
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
L. You
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
P. Bai
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

The future high density multilevel interconnection and packaging requires that the combination of the insulator and conductor layers has a low RC value. Thermal stress and diffusion during processing are issues of great concern in the high density multilevel structures. The problem can be alleviated by a proper choice of materials and processes that do not require high temperature. In this paper we propose to use parylene and its derivatives (dielectric constant 2.3–2.6) as the possible interlayer dielectrics and Cu (bulk resistivity ∼1.7 μ Ω-cm) as the conductor. Parylene can be vapor-deposited and cured at room temperature. The metallization of Cu has been achieved at room temperature using the newly developed partially ionized beam deposition technique. This technique has been shown to grow high quality metal films with low resistivity at low substrate temperatures. The interaction between Cu and parylene, including adhesion and diffusion, is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 55
Copyright
Copyright © Materials Research Society 1990

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References

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