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Low Temperature Synthesis of Plasma Teos SiO2

Published online by Cambridge University Press:  10 February 2011

T. Itani  and
S. Fukuyama
T. Itani
Affiliation:
Inorganic Materials & Polymers Laboratory, Fujitsu Laboratories LTD., 10-1, Morinosato-Wakamiya, Atsugi 243-01, JAPAN E-mail: titani@flab.fujitsu.co.jp
S. Fukuyama
Affiliation:
Inorganic Materials & Polymers Laboratory, Fujitsu Laboratories LTD., 10-1, Morinosato-Wakamiya, Atsugi 243-01, JAPAN E-mail: titani@flab.fujitsu.co.jp
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Abstract

In this study, we investigated the deposition temperature's affect on TEOS based Si02 properties and reaction mechanisms while changing the excitation frequency. We used a parallel-plate plasma reactor, and either 100 kHz or 13.56 MHz radio frequency to generate plasma. We found that 100 kHz plasma promotes SiO formation and improves the film properties at low deposition temperatures. We assume this to be due to the supplement of higher energy ions to the substrate surface in 100 kHz plasma. This in turn promotes the elimination reaction (condensation reaction) of OH that links to Si atoms as a terminator of surface SiO networks or precursor molecules.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 255
Copyright
Copyright © Materials Research Society 1997

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