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Low Temperature Transparent ITO-based Contacts for Mid-IR Applications

  • F. Genty (a1) (a2), S. Margueron (a2), S. Ould Saad Hamady (a2), J.C. Petit (a2), H. Srour (a2), A. Karsaklian dal Bosco (a1) (a2), J. Sadok (a1), J. Huguenin (a2), M. Bouirig (a1) and J. Jacquet (a1) (a2)...
Abstract

In this work, thin films of Indium Tin Oxide (ITO)-based materials were tested as potential candidates for mid-IR transparent contacts on Te-doped GaSb and Si-doped InAs semiconductor wafers. Since these contacts are devoted to be inserted in Sb-based devices which are generally MBE-grown at ∼450°C, low-temperature fabrication processes were particularly tested with a maximum temperature of annealing of 400°C. 50 nm-thick ITO films were deposited on glass, Te-doped GaSb and Si-doped InAs wafers and resistivity of 8.10−4 Ω.cm combined with ∼80% of transmittance at 2 μm and ohmic contacts with a specific resistance of 3.10−4 Ω.cm2 were obtained. Then, in order to improve these properties in the mid-IR, other ITO-based materials were tested: In doped ZnO (IZO) and Zn doped ITO (ITZO). The first results obtained on these materials show that the insertion of 10% of Zn in classical ITO structure results in a degradation of the electrical properties of the layer without a real impact on its optical transmittance near 2 μm. Concerning IZO, a large improvement of the transmittance in the whole visible-mid-IR wavelength range was observed for annealed samples at a temperature as low as 350°C. However, the electrical resistivity appears very sensible to the temperature of annealing.

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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
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