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Low-Temperature Device-Quality SiO2/Si (100) Interfaces Prepared By A Combined Remote Plasma Oxidation-Deposition Process

Published online by Cambridge University Press:  25 February 2011

T. Yasuda ,
Y. Ma  and
G. Lucovsky
T. Yasuda
Affiliation:
Departments of Physics, and Material Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
Y. Ma
Affiliation:
Departments of Physics, and Material Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
G. Lucovsky
Affiliation:
Departments of Physics, and Material Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
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Abstract

Gate-quality SiO2/Si(100) interfaces were reproducibly fabricated using a two-step remote plasma-assisted oxidation/thin-film deposition processing sequence at temperatures between 200 and 300°C. The pre-deposition oxidation creates approximately 0.5nm of SiO2, and produces an SiO2/Si interface with a midgap trap density of ∼1.3×1010cm−2eV−1. The MOS capacitors prepared by this technique have properties comparable to those with thermal oxides grown at 850–1050°C. These capacitors also show a longer minority-carrier life time in the underlying Si than samples prepared using other pre-deposition treatment methods.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 713
Copyright
Copyright © Materials Research Society 1992

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References

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