Hostname: page-component-cb9f654ff-65tv2 Total loading time: 0 Render date: 2025-09-08T19:55:14.479Z Has data issue: false hasContentIssue false
  • English
  • Français

Low-Temperature Diffusion of Dopants in Silicon

Published online by Cambridge University Press:  25 February 2011

P. Fahey  and
M. Wittmer
P. Fahey
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
M. Wittmer
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
Get access

Abstract

It has been reported that diffusion of substitutional dopant atoms in silicon occurs during the formation of transition-metal suicides at temperatures below 300°C. By observing the diffusion enhancements of buried marker layers of Sb-, Ga-, Ge-, and B-doped silicon layers, we provide solid experimental evidence that the diffusion enhancement induced by Pd2Si formation at low temperatures is due to point defects generated by the suicide reactions. Diffusion enhancement is observed at temperatures as low as 200°C. We have found the surprising result that diffusion is asymmetric: diffusion occurs preferentially towards the suiciding interface.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1 Wittmer, M. and Tu, K.N., Phys. Rev. B 29, 2010 (1984) and references therein.Google Scholar
2 Ohdomari, I., Konuma, K., Takano, M., Chikyow, T., Kawarada, H., Nakanishi, J., and Ueno, T., Mat. Res. Soc. Symp. Proc., Vol. 54, p. 63 (1986).Google Scholar
3 Wen, D. S., Smith, P. L., Osburn, C. M., and Rozgonyi, G. A., Appl. Phys. Lett., 51, 1182 (1987).Google Scholar
4 Hu, S. M., Appl. Phys. Lett., 51, 308 (1987).Google Scholar
5 Meyerson, B. S., LeGoues, F. K., Nguyen, T. N., and Harame, D. L., Appl. Phys. Lett., 50,113 (1987).Google Scholar
6 Fahey, P., Iyer, S. S., and Scilla, G. J., Appl. Phys. Lett., 54, 843 (1989); and unpublished results.Google Scholar
7 Anthony, T. R. in “Diffusion in Solids”, edited by Nowick, A. S. and Burton, J. J. (Academic, New York, 1975), p. 353.Google Scholar
8 Hirata, M., Hirata, M., and Saito, H., J. Phys. Soc. Jpn., 27, 405 (1969).Google Scholar
9 Car, R., Kelly, P. J., Oshiyama, A., and Pantelides, S., Phys. Rev. Lett., 54, 360 (1985).Google Scholar
10 Fahey, P. M., Griffin, P. B., and Plummer, J. D., Rev. Mod. Phys., 61, 289 (1989).Google Scholar