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Luminescence Of A New Material: GaN Grown On NdGaO3

Published online by Cambridge University Press:  10 February 2011

K. P. Korona ,
K. Pakula ,
A. Wysmolek ,
J. M. Baranowski ,
J. P. Bergman ,
B. Monemar ,
T. Łukasiewicz  and
Z. Łuczyński
K. P. Korona
Affiliation:
Institute of Experimental Physics, Warsaw University, ul. Hoza 69, 00–681 Warszawa, Poland
K. Pakula
Affiliation:
Institute of Experimental Physics, Warsaw University, ul. Hoza 69, 00–681 Warszawa, Poland
A. Wysmolek
Affiliation:
Institute of Experimental Physics, Warsaw University, ul. Hoza 69, 00–681 Warszawa, Poland
J. M. Baranowski
Affiliation:
Institute of Experimental Physics, Warsaw University, ul. Hoza 69, 00–681 Warszawa, Poland
J. P. Bergman
Affiliation:
Dept. of Physics and Measurement Technology, Linköping University, S -581 83 Linköping, Sweden
B. Monemar
Affiliation:
Dept. of Physics and Measurement Technology, Linköping University, S -581 83 Linköping, Sweden
T. Łukasiewicz
Affiliation:
Institute of Electronic Materials Technology, W61czynska 133, 01–919 Warszawa, Poland
Z. Łuczyński
Affiliation:
Institute of Electronic Materials Technology, W61czynska 133, 01–919 Warszawa, Poland
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Abstract

It is shown that heteroepitaxial GaN layers grown on NdGaO3, in spite of a very high conductivity (˜ 10 Ω−1cm−1) have very efficient luminescence properties. It is shown that a high electrical conductivity is caused by contamination of GaN layers with oxygen. Efficient emission due to donor bound excitons (at hv = 3.475 eV), free excitons and free electron – hole recombination have been identified. The total PL emission in the exciton region exceeds the intensity from the homoepitaxial GaN layers. It is argued that a high oxygen concentration eliminates nonradiative channels connected with point defects, leading to efficient radiative recombination.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 725
Copyright
Copyright © Materials Research Society 1998

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References

[1] Ubizskii, S. B., Vasylechko, L. O., Savytskii, D. I., Matkovskii, A. O., Syvorotka, I. M., Supercond. Sci. Technol. 7, p. 766 (1994)Google Scholar
[2] O‘Bryan, H. M., Gallager, K. P., Berkstresser, G. W., Brandle, C. D., J. Mater. Res.Google Scholar
[3] Pakula, K., Wysmolek, A., Korona, K. P., Baranowski, J. M., Stepniewski, R., Grzegory, I., Lucznik, B., Wróblewski, M., Porowski, S., Solid State Commun. 97, p. 919 (1996)Google Scholar
[4] Monemar, B., Bergman, J. P., Ivanov, I. G., Baranowski, J. M., Pakula, K., Grzegory, I., Porowski, S., Solid State Commun. 104, p. 205 (1997)Google Scholar
[5] Bergman, J.P., Monemar, B., Amano, H., Akasaki, I., Detchprohm, T., Hiramatsu, K. and Sawaki, N., Proc. ICSCRM'95, Kyoto 1995, IOP Conference Proceedings 142, p. 931 (1996).Google Scholar