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Luminescence of quasi-2DEG in heterostructures based on PbS films
Published online by Cambridge University Press: 21 March 2011
Abstract
The paper deals with the problem of luminescence due to non-equilibrium charge carriers transfer between the quasi-2D electron system localized in the space-charge region of the heterostructures based on lead sulfide films (up to 3 μm thickness) and zinc selenide substrates surrounded by the wide gap semiconductor region. The processes of electro- and photoluminescence are studied, the band diagram is proposed and the main parameters of the structure PbS/quasi-2DEG/ZnSe are calculated.
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- Research Article
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- Copyright © Materials Research Society 2002
References
1.
Andrukhiv, A., Khlyap, G., Andrukhiv, M., Bochkariova, L. Thin Solid Films, 267, 126 (1995)Google Scholar
5
Sze, S. M., Physics of Semiconductor Devices, Second Edition, John Viley & Sons, New York, 1981.Google Scholar
6.
Bleuse, J., Bonnet-Gamard, J., Mula, G., Magnea, N., Pautrat, J.-L.
J. Cryst. Growth, 197, 529 (1999)Google Scholar