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Luminescence Properties of Yb- and Nd- Implanted CdS

Published online by Cambridge University Press:  21 February 2011

A. K. Alshawa ,
H. J. Lozykowski ,
T. Li  and
I. Brown
A. K. Alshawa
Affiliation:
Ohio University, Department of Electrical and Computer Engineering, Athens, OH
H. J. Lozykowski
Affiliation:
Ohio University, Department of Electrical and Computer Engineering, Athens, OH
T. Li
Affiliation:
Ohio University, Department of Electrical and Computer Engineering, Athens, OH
I. Brown
Affiliation:
University of California, Berkeley, Lawrence Berkeley Laboratory, Berkeley, CA
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Abstract

The photoluminescence (PL) and time resolved spectra of Nd- and Yb-implanted CdS samples are studied under pulsed and CW excitations using Ar+ ion laser for different excitation intensities and temperature (9 - 300 K). The samples were annealed under different conditions using the thermal-pulse method. For CdS:Nd, the PL spectra was recorded in the range 890-930 nm (transitions 4F3/2→4I9/2) and for CdS:Yb it was recorded in the range 985 - 1010 nm (transitions 2F5/2 →2F7/2). The Rise time and decay time were studied for both CdS:Nd and CdS:Yb at different emission lines as a function of temperature and excitation power.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 281
Copyright
Copyright © Materials Research Society 1993

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References

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