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Magnetostriction and Stress in High Moment FeTaN Films

Published online by Cambridge University Press:  03 September 2012

J. C. Cates ,
G. Qiu ,
E. Haftek ,
C. Alexander Jr  and
J. A. Barnard
J. C. Cates
Affiliation:
The University of Alabama, The Department of Physics and Astronomy, Tuscaloosa, AL 35487–0202
G. Qiu
Affiliation:
The University of Alabama The Department of metallurgical and Materials Engineering, Tuscaloosa, AL 35487–0202
E. Haftek
Affiliation:
The University of Alabama The Department of metallurgical and Materials Engineering, Tuscaloosa, AL 35487–0202
C. Alexander Jr
Affiliation:
The University of Alabama, The Department of Physics and Astronomy, Tuscaloosa, AL 35487–0202 The University of Alabama The Department of metallurgical and Materials Engineering, Tuscaloosa, AL 35487–0202
J. A. Barnard
Affiliation:
The University of Alabama The Department of metallurgical and Materials Engineering, Tuscaloosa, AL 35487–0202
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Abstract

Magnetostriction and thin film stress have been studied in high moment single layer FeTaN films deposited by high rate reactive dc magnetron sputtering. Low Magnetostriction (Magnitude less than 1 × 10-6) can be obtained over a fairly large range of nitrogen flow rates during film deposition by vacuum annealing at 500°C. After annealing at 500°C for two hours, all films were found to be in a state of tensile stress. Stress versus temperature measurements up to 400°C show film stress in as-deposited films to be highly hysteretic during the first temperature cycle reflecting the films' processing history. Stress-temperature cycles on annealed samples indicate that extremely stable films are produced in an intermediate range of nitrogen content.

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References

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