Hostname: page-component-cb9f654ff-d5ftd Total loading time: 0 Render date: 2025-08-27T13:23:39.523Z Has data issue: false hasContentIssue false
  • English
  • Français

Magnetron Enhanced Reactive Ion Etching in a Hexode System

Published online by Cambridge University Press:  28 February 2011

Scott Bell  and
Thijs Bril
Scott Bell
Affiliation:
Philips Research Laboratories/Signetics, Sunnyvale, CA 94088-3409
Thijs Bril
Affiliation:
Philips Research Laboratories/Signetics, Sunnyvale, CA 94088-3409
Get access

Abstract

A method of forming a uniform magnetic field in a modified hexode type etch system is described.Experimental results of etching Si, SiO2 and photoresist with NF3 are presented.The magnetic field effectively increases the ion flux and decreases the energy of the ions bombarding the cathode.It was found that adding a magnetic field increases the etchrate of Si for the conditions studied, but for SiO2 and photoresist, the decreased ion bombardment energy leads to lower etchrates under certain conditions.The resulting effect on selectivities is discussed.

Information

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 53
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Reinberg, A. R, Avem, J.Dalle, Steinberg, G., and Bruce, R.H., Electrochemical Society, Extended Abstract No.275, (1981).Google Scholar
2. Suzuki, K., Okudaira, S., Sakudo, N., and Kanomata, I., Jpn.J.Appl.Phys. 16, 1979 (1977).CrossRefGoogle Scholar
3. Dzioba, S., Este, G., and Naguib, H.M., J.Electrochem.Soc. 129, 2537 (1982).CrossRefGoogle Scholar
4. Nishimatsu, S., Suzuki, K., Ninomiya, K., and Okudaira, S., 1982 Dry Process Symposium, 1982, p.11.Google Scholar
5. Zarowin, C.B., Steinberg, G.N., and Reinberg, A.R., Electrochemical Society, Extended Abstract No.157, p.253, (1983).Google Scholar
6. Horiike, Y., Okano, H., Yamazaki, T., and Horie, H., Jpn., J.Appl.Phys. 20, L817 (1981).CrossRefGoogle Scholar
7. Thornton, J.A. and Penfold, A.S., in Thin Film Processes, edited by Vossen, J.L. and Kern, W. (Academic Press, New York, 1978), p.176.Google Scholar
8. Chapman, B., Glow Discharge Processes, (John Wiley & Sons, New York, 1980).p.265.Google Scholar
9. I, Lin, Hinson, D.C., Class, W.H., Sanstrom, R.L., and Pasierb, F., Proc.4th Symp.on Plasma Processing, San Francisco, 1983, ECS Proc.Vol.83–10, 132 (1983).Google Scholar
10. Logan, J.S., Mazza, N.M., and Davidse, P.D., J.Vac.Sci.Technol. 6 (1), 120 (1969).CrossRefGoogle Scholar
11. van den Hoek, W.G.M., Proc.Symp.on Plasma Processing, Palo AIto, 1986, MRS Proc.Vol.68, Abstract No.C2.4 (1986).Google Scholar
12. Emmi, F., Egitto, E., and Horwath, R., Proc.5th Symp.on Plasma Processing, Toronto, 1985, ECS Proc.Vol.85–1, 193 (1985).Google Scholar