Hostname: page-component-8448b6f56d-cfpbc Total loading time: 0 Render date: 2024-04-19T16:44:32.067Z Has data issue: false hasContentIssue false
  • English
  • Français

Manipulation of Nucleation During Si Molecular Beam Epitaxy

Published online by Cambridge University Press:  21 February 2011

Mats I. Larsson ,
Wei-Xin Ni  and
Göran V. Hansson
Mats I. Larsson
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden.
Wei-Xin Ni
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden.
Göran V. Hansson
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden.
Get access

Abstract

In this study we report on manipulation of nucleation by means of periodic modulation of the growth rate, R, during molecular beam epitaxial growth of Si on Si(l11). We have found that the bilayer (BL)-by-BL growth can be improved by applying the R-modulation synchronized with the nucleation and that the phase of reflection high-energy electron diffraction (RHEED) intensity oscillations can be shifted independently of the bilayer (BL) deposition. A beating phenomenon of the RHEED oscillations was observed, which can be attributed to the superimposed effects of the R-modulation and the regular BL-by-BL growth. We have used the phenomenological correspondence between the surface step density and the RHEED oscillations as a basis to discuss the growth. By employing a kinetic solid-on-solid Monte Carlo model without vacancies and overhangs all significant experimental features could be simulated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 27
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Markov, V. A., Pchelyakov, O. P., Sokolov, L. V., Stenin, S. I. and Stoyanov, S., Surf. Sci. 250, 229 (1991).Google Scholar
[2] Larsson, M. I., Björklund, L.-E. and Hansson, G. V., in: Silicon-Molecular Beam Epitaxy, Eds. Bean, J. C., Iyer, S. S. and Wang, K. L., Vol. 220 (Mater. Res. Soc, Pittsburgh, 1991) p. 49.Google Scholar
[3] Larsson, M. I. and Hansson, G. V., Jpn. J. Appl. Phys. 33, 2282 (1994).Google Scholar
[4] Larsson, M. I., Ni, W.-X., and Hansson, G. V., Phys. Rev. B 50, 5335 (1994).Google Scholar
[5] Ni, W.-X., Henry, A., Larsson, M. I., Joelsson, K., and Hansson, G. V., Appl. Phys. Lett. 65, 1772 (1994).Google Scholar
[6] Maksym, P. A., Semicond. Sci. Technol. 3, 594 (1988).Google Scholar
[7] Yokotsuka, T., Wilby, M. R., Vvedensky, D. D., Kawamura, T., Fukutani, K. and Ino, S., Appl. Phys. Lett. 62, 1673 (1993).Google Scholar
[8] Clarke, S. and Vvedensky, D. D., Phys. Rev. Lett. 58, 2235 (1987).Google Scholar
[9] Sudijono, J., Johnson, M. D., Snyder, C. W., Elowitz, M. B. and Orr, B. G., Phys. Rev. Lett. 69, 2811 (1992).Google Scholar