Hostname: page-component-7bb8b95d7b-2h6rp Total loading time: 0 Render date: 2024-09-25T06:15:42.847Z Has data issue: false hasContentIssue false
  • English
  • Français

Mapping the Phase-Change Parameter Space of Hot-Wire CVD Si:H Films Using In-Situ Real Time Spectroscopic Ellipsometry

Published online by Cambridge University Press:  01 February 2011

Dean H. Levi ,
Brent P. Nelson  and
John D. Perkins
Dean H. Levi
Affiliation:
National Center for Photovoltaics, National Renewable Energy Laboratory 1617 Cole Blvd., Golden, CO 80401, U.S.A.
Brent P. Nelson
Affiliation:
National Center for Photovoltaics, National Renewable Energy Laboratory 1617 Cole Blvd., Golden, CO 80401, U.S.A.
John D. Perkins
Affiliation:
National Center for Photovoltaics, National Renewable Energy Laboratory 1617 Cole Blvd., Golden, CO 80401, U.S.A.
Get access

Abstract

In-situ real-time spectroscopic ellipsometry (RTSE) provides detailed information on the evolution of the structural and optical properties of Si:H films during film growth. We have used in-situ RTSE to characterize the film morphology and crystallinity of hot-wire CVD (HWCVD) Si:H films as a function of hydrogen dilution R=[H]/[H+SiH4], substrate temperature Ts, and film thickness db. Transitions from one mode of film growth to another are indicated by abrupt changes in the magnitude of the surface roughness during film growth. The degree of crystallinity of the film can be determined from the bulk dielectric function. We have studied the growth parameter space consisting of R from 0 to 12, Ts from 150°C to 550°C, and db from 0 to 1 um. For each set of R and Ts values, the structural evolution of the film can be characterized by the shape of the surface roughness thickness ds versus bulk thickness db curve. In contrast to studies done by Collins et al on PECVD growth of Si:H films, our studies of HWCVD growth find no conditions where ds remains constant after coalescence of the initial nucleation centers. Most of the films grown within the range of parameters studied exhibit a secondary nucleation and coalescence signature. The transition between a-Si:H and uc-Si:H growth is near the R=3 to R=4 dividing line. Initial coalescence of purely uc-Si:H material doesn't occur until R>8. We have verified the RTsE crystallinity classification using ex-situ Raman scattering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A25.2
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Thin Solid Films, Vol. 395, Proceedings of the First International Conference on Cat-CVD (Hot-Wire CVD) Process, edited by Conde, J.P., Masumura, H., and Mahan, A.H. (Elsevier Science B.V., The Netherlands, June 2001).Google Scholar
2. Collins, R.W., Koh, Joohyun, Fujiwara, H., Rovira, P.I., Ferlauto, A.S., Zapien, J.A., Wronski, C.R., Messier, R., Appl. Surf. Sci., 154-155, 217–228 (2000).Google Scholar
3. Ferlauto, A.S., Koval, R.J., Wronski, C.R., Collins, R.W., Mat. Res. Soc. Symp. Proc., Vol. 664, A5.4 (2002).Google Scholar
4. Nelson, B.P. and Levi, D.H., Mat. Res. Soc. Symp. A17.3 (2002).Google Scholar
5. Wang, K., Zhang, H., Zhang, J., Weinberg-Wolf, J., Owens, J.M., Han, D., Gedvilas, L. and Nelson, B.P., Mat. Res. Soc. Symp. A17.2 (2002).Google Scholar
6. Ferlauto, A.S., Ferreira, G.M., Chen, Chi, Rovira, P.I., Wronski, C.R., Collins, R.W., Deng, X., Ganguly, G., “Optical metrology for the next generation of a-Si:H-based thin film photovoltaics,” Photovoltaics for the 21st Century II, ed McConnell, R.D. and Kapur, V.K. (The Electrochemical Society, 2001) pp.199–228.Google Scholar
7. Yue, Guozhen, Lorentzen, J. D., Lin, Jing, Wang, Qi and Han, Daxing, APL. 75, 492 (1999).Google Scholar