Hostname: page-component-cb9f654ff-5jtmz Total loading time: 0 Render date: 2025-08-24T05:14:15.479Z Has data issue: false hasContentIssue false
  • English
  • Français

Material Parameters for Analytical and Numerical Modeling of Si and Strained SiGe Heterostructure Devices

Published online by Cambridge University Press:  21 March 2011

S. C. Jain ,
A. Mehra ,
S. Decoutere ,
W. Schoenmaker  and
M. Willander
A. Mehra
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
S. Decoutere
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
M. Willander
Affiliation:
Chalmers University of Technology, Department of Physics, S-41296 Göteborg, Sweden
Get access

Abstract

We present calculated values of effective masses, bandgap reduction, and Fermi energy of p-doped Si and strained p-doped SiGe layers. The calculations have been made for Ge concentrations in the range 0 to 30% and boron concentration in the range 1018 cm−3 to 3×1020 cm−3. Empirical expressions for the effective masses are given. These expressions and calculated values of the other parameters are convenient for use in computer codes for modeling device processing and performance. To validate the calculated values, we have compared them with the available experimental results. Good agreement between the calculated and the experimental values is found.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Jain, S. C., Germanium-Silicon Strained Layers and Heterostructures, Advances in Electronics and Electron Physics series, (Supplement 24) (Academic Press, Boston 1994).Google Scholar
2. Jain, S. C., Decoutere, S. and Maes, H. E., SiGe HBTs for BiCMOS applications (a two-part review), Semicond. Sc. Technol., in press.Google Scholar
3. Cressler, J. D., IEEE-Transactions on Microwave Theory and Techniques 46, 572 (1998).Google Scholar
4. Jain, S. C. and Roulston, D. J., Solid State Electronics 34, 453 (1991).Google Scholar
5. Manku, T. and Nathan, A., J. Appl. Phys. 69, 8414 (1991).Google Scholar
6. Souifi, A., Benyattou, G., and Guillot, G., Appl. Phys. Lett. 62, 2986 (1993).Google Scholar
7. Manning, B. M. et al. , J. Vac. Sci. Technol. B 11, 1190 (1993).Google Scholar
8. Manual of the computer code DIOS ISE, ISE TCAD, vs. 6.1, Year 2000, Chapter 11.Google Scholar
9. Dumke, W. P., J. Appl. Phys. 54, 3200 (1983).Google Scholar
10. Wagner, J. and Alamo, J. A. del, J. Appl. Phys. 63, 425 (1988), and references given therein.Google Scholar
11. Cowern, N. E. B., Janssen, K. T. F., and Jos, H. F. F., J. Appl. Phys. 68, 6191 (1990).Google Scholar
12. Fahey, P. M., Griffin, P. B., and Plummer, J. D., Rev. Modern Phys. 61, 289 (1989).Google Scholar