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Material Properties of P-Type A-Sic Layers Using Either Diborane or Trimethylboron as Doping Gas

Published online by Cambridge University Press:  25 February 2011

P. Lechner ,
M. Gorn ,
H. RÜbel ,
B. Scheppat  and
N. Kniffler
P. Lechner
Affiliation:
Phototronlcs Solartechnlk GmbH, D-8011 Putzbrunn, FRG
M. Gorn
Affiliation:
Phototronlcs Solartechnlk GmbH, D-8011 Putzbrunn, FRG
H. RÜbel
Affiliation:
Phototronlcs Solartechnlk GmbH, D-8011 Putzbrunn, FRG
B. Scheppat
Affiliation:
Phototronlcs Solartechnlk GmbH, D-8011 Putzbrunn, FRG
N. Kniffler
Affiliation:
Phototronlcs Solartechnlk GmbH, D-8011 Putzbrunn, FRG
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Abstract

Hydrogenated amorphous SiC:H films prepared by rf glow discharge from a silane-methane mixture have been B-doped either from diborane or from trimethyl boron (TMB). In the latter a higher hydrogen content is found explaining a higher Tauc optical gap EG, however also a lower dark conductivity for the same boron concentration in the film. Thus the figure of merit of our p-layers doped from TMB is not improved. Further the observed narrowing of the Tauc gap could not be correlated with a decrease of the hydrogen content at high B-doping. The reduction of EG is mainly explained by a drastic broadening of the absorption edge caused by creation of boron induced defects and structural disorder but not due to a shift of the absorption edge.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 81
Copyright
Copyright © Materials Research Society 1990

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References

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