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Material-Process Interactions in the Annealing of Gallium Arsenide

Published online by Cambridge University Press:  15 February 2011

C. Lawrence Anderson
C. Lawrence Anderson*
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, California 90265, USA.
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Abstract

This review article provides an overview of the current understanding of the physical mechanisms involved in the annealing of ion implanted GaAs by thermal techniques and by CW and pulsed laser and electron beams. The successfulness of these techniques is evaluated in terms of the electrical and optical properties of the annealed layers. Promising areas of investigation for the improvement of the electrical properties of n-type layers produced by pulsed annealing are identified.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 653
Copyright
Copyright © Materials Research Society 1982

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References

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