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Material-Process Interactions in the Annealing of Gallium Arsenide

Published online by Cambridge University Press:  15 February 2011

C. Lawrence Anderson
C. Lawrence Anderson*
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, California 90265, USA.
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Abstract

This review article provides an overview of the current understanding of the physical mechanisms involved in the annealing of ion implanted GaAs by thermal techniques and by CW and pulsed laser and electron beams. The successfulness of these techniques is evaluated in terms of the electrical and optical properties of the annealed layers. Promising areas of investigation for the improvement of the electrical properties of n-type layers produced by pulsed annealing are identified.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 653
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1. Laser-Solid Interactions and Laser Processing – 1978, Ferris, S. D., Leamy, H. J., and Poate, J. M., eds., AIP Conf. Proc. 50, New York, American Inst. Phys., (1979).Google Scholar
2. Laser and Electron Beam Processing of Materials, White, C. W. and Peercy, P. S., eds., New York, Academic, (1980).Google Scholar
3. Laser and Electron Beam Solid Interactions and Materials Processing, Gibbons, J. F., Hess, L. D., and Sigmon, T. W., eds. Mat. Res. Soc. Symp. Proc. 1, New York, North Holland, (1981).Google Scholar
4. Laser and Electron Beam Processing of Electronic Materials, Anderson, C. L., Celler, G. K., and Rozgonyi, G. A., eds., Proc. Vol. 80–1, Princeton, Electrochem. Soc., (1980).Google Scholar
5. Williams, J. S. and Harrison, H. B. in Ref. 3, pp. 209–222.Google Scholar
6. Fan, J. C. C., Chapman, R. L., Donnelly, J. P., Turner, G. W., and Bozler, C. O. in Ref. 3, pp. 261–274.Google Scholar
7. Badawi, M. H., Sealy, B. J., Kular, S. S., Barrett, N. J., Emerson, N. G., Stephens, K. G., Booker, G. R., and Hockley, M. in Ref. 2, pp. 354–359.Google Scholar
8. Venkatesan, T. N. C., Auston, D. H., Golovchenko, J. A., and Surko, C. M. in Ref. 1, pp. 629–633.Google Scholar
9. Anderson, C. L., Vaidyanathan, K. V., Dunlap, H. L., and Kamath, G. S., J. Electrochem. Soc. 127, 925 (1980).CrossRefGoogle Scholar
10. Woodall, J. M., Rupprecht, H., Chicotka, R. J., and Wicks, G., Appl. Phys. Lett. 38, 639 (1981).CrossRefGoogle Scholar
11. Nishi, H., Okamura, S., Inada, T., Hashimoto, H., Katoda, J., and Nakamura, T., “AlN Encapsulant for Fabrication of Implanted GaAs IC,” presented at 1981 International Symposium on Gallium Arsenide and Related Compounds, Oiso, Japan, September 20–23, 1981, and submitted for publication in symposium Proceedings.Google Scholar
12. Kwun, S.-I., Hong, C.-H., and Spitzer, W. G., “Low Temperature Annealing of Be-Implanted GaAs,” submitted to J. Appl. Phys.Google Scholar
13. Anderson, C. L. and Dunlap, H. L., Appl. Phys. Lett. 35, 178 (1979).Google Scholar
14. Grimaldi, M. G., Paine, B. M., Mäenpää, M., Nicolet, M.-A., and Sadana, D. K., Appl. Phys. Lett. 39, 70 (1981).Google Scholar
15. Foyt, A. G., Donnelly, J. P., and Lindley, W. T., Appl. Phys. Lett. 14, 73 (1969).Google Scholar
16. Donnelly, J. P., Lindley, W. T., and Hurwitz, C. E., Appl. Phys. Lett. 27, 41 (1975);CrossRefGoogle Scholar
Bozler, C. L., Donnelly, J. P., Murphy, R. A., Laton, R. W., Sudbury, R. W., and Lindley, W. T., Appl. Phys. Lett. 29, 123 (1976).CrossRefGoogle Scholar
17. Vaidyanathan, K. V., Helix, M. J., Wolford, D. J., Streetman, B. G., Blattner, R. J., and Evans, C. A. Jr., J. Electrochem. Soc. 124, 1781 (1977).CrossRefGoogle Scholar
18. Eisen, F. H., Welch, B. M., Gamo, K., Inada, T., Muller, H., Nicolet, M.-A., and Mayer, J. W. in Applications of Ion Beams to Materials, Carter, G., Colligan, J. S., and Grant, W. A., eds., Conf. Series 28, London, Inst. Phys., 1976, pp. 64–68.Google Scholar
19. Gamo, K., Inada, T., Krekeler, S., Mayer, J. W., Eisen, F. H., and Welch, B. M., Solid-St. Electron. 20, 213 (1977).Google Scholar
20. Eisen, F. H. and Welch, B. M. in Ion Implantation in Semiconductors 1976, Chernow, F., Borders, J. A., and Brice, D. K., eds., New York, Plenum, 1977, pp. 97–106.Google Scholar
21. Ramiller, C. L., Anderson, C. L. and Dunlap, H. L. in Ion Implantation of Wide Bandgap Semiconductors, Annual Technical Report No. 1 for period 1 October 1976 through 30 September 1977, Naval Electronic Systems Command Contract No. N00173–77–C–0051.Google Scholar
22. Kasahara, J., Arai, M., and Watanabe, N., J. Appl. Phys. 50, 541 (1979).CrossRefGoogle Scholar
23. Malbon, R. M., Lee, D. H., and Whelan, J. M., J. Electrochem. Soc. 123, 1413 (1976).CrossRefGoogle Scholar
24. Immorlica, A. A. and Eisen, F. H., Appl. Phys. Lett. 29, 94 (1976).Google Scholar
25. Nissim, Y. I. and Gibbons, J. F. in Ref. 3, pp. 275–280.Google Scholar
26. Shah, N. J., McMahon, R. A., Williams, J. G. S., and Ahmed, H. in Ref. 3, pp. 201–208;Google Scholar
Shah, N. J. and Ahmed, H., Electron. Lett. 16, 433 (1980).Google Scholar
27. Bujatti, M., Cetronio, A., Nipoti, R., and Olzi, E., “Multiscanned Electron Beam Annealing of Si-Implanted GaAs,” in these Proceedings.Google Scholar
28. Lowndes, D. H., Cleland, J. W., Christie, W. H., and Eby, R. E., in Ref. 3, pp. 223–230.Google Scholar
29. Wood, R. F., Lowndes, D. H., and Christie, W. H. in Ref. 3, pp. 231–238.Google Scholar
30. Pianetta, P. A., Stolte, C. A., and Hansen, J. L. in Ref. 2, pp. 328–333.Google Scholar
31. Liu, S. G., Wu, C. P., and Magee, C. W. in Ref. 2, pp. 341–346.Google Scholar
32. Anderson, C. L., Dunlap, H. L., Hess, L. D., and Vaidyanathan, K. V. in Ref. 1, pp. 585–589.Google Scholar
33. Cullis, A. G. and Webber, H. C. in Ref. 4., pp. 220–226;Google Scholar
Cullis, A. G., Webber, H. C., and Bailey, P., J. Phys. E. 12, 668 (1979).Google Scholar
34. Kim, Q., Park, Y. S., Mason, R. S., Luke, T. E., Hengehold, R. L., and Yeo, Y. K. in Ref. 1, pp. 597–602.Google Scholar
35. Tsu, R., Baglin, J. E., Lasher, G. J., and Tsang, J. C. in Ref. 1, pp. 623–628.Google Scholar
36. Zehner, D. W., White, C. W., Ownby, G. W., and Appleton, B. R., “Studies of Laser Annealed GaAs (100), (110) and (111) Surfaces” in these Proceedings.Google Scholar
37. Olson, G. L., Anderson, C. L., Dunlap, H. L., Hess, L. D., MacFarlane, R. A., and Vaidyanathan, K. V. in Ref. 4, pp. 467–477.Google Scholar
38. Badawi, M. H., Akintunde, J. A., Sealy, B. J., and Stephens, K. G., Electron. Lett. 15, 448 (1979).Google Scholar
39. Davies, D. E., Ryan, T. G., Lorenzo, J. P., and Kennedy, E. F. in Ref. 3, pp. 247–253.Google Scholar
40. Gamo, K., Yuba, Y., Oraby, A. H., Murakami, K., Namba, S., and Kawasaki, Y. in Ref. 2, pp. 322–327.Google Scholar
41. Emerson, N. G. and Sealy, B. J., Electron. Lett. 15, 553 (1979).Google Scholar
42. Kaminska, K., Lagowski, J., Parsey, J., and Gatos, H. C., “Oxygen Induced Deep Levels in GaAs,” presented at 1981 International Symposium on Gallium Arsenide and Related Compounds, Oiso, Japan, September 20–23, 1981, and submitted for publication insymposium Proceedings.Google Scholar
43. Yuan-Xi, Z., “Some Aspects of Deep Levels and Space Charges in Gallium Arsenide,” presented at 1981 International Symposium on Gallium Arsenide and Related Compounds, Oiso, Japan, September 20–23, 1981, and submitted for publication in symposium Proceedings.Google Scholar
44. Mooney, P. M., Bourgoin, J. C., and Icole, J. in Ref. 3, pp. 255–261.Google Scholar
45. Emerson, N. G. and Sealy, B. J., Electron. Lett. 16, 512 (1980).Google Scholar
46. Davies, D. E., Lorenzo, J. P., Kennedy, E. F., and Ryan, T. G., “Electrical Qualityof Pulse Annealed GaAs,” presented at 1981 International Symposium on Gallium Arsenide and Related Compounds, Oiso, Japan, September 20–23, 1981, and submitted for publication in symposium Proceedings.Google Scholar
47. Anderson, C. L., Dunlap, H. L., Hess, L. D., Olson, G. L., and Vaidyanathan, K. V. in Ref. 2., pp. 334–340.Google Scholar
48. Pianetta, P., Amano, J., Woolhouse, G., and Stolte, C. A. in Ref. 3, pp. 239–245.Google Scholar
49. Yuba, Y., Gamo, K., and Namba, S., “Deep Levels in Implanted and Laser Annealed GaAs Studied by Current- and Capacitance-Transient Spectroscopy,” presented at 1981 International Symposium on Gallium Arsenide and Related Compounds, Oiso, Japan, September 20–23, 1981, and submitted for publication in symposium Proceedings.Google Scholar
50. Lowndes, D. H. and Feldman, B. J., “Photoluminescence of Pulsed Ruby Laser Annealed and Crystalline and Ion Implanted GaAs,” in these Proceedings.CrossRefGoogle Scholar
51. Narayan, J. in Ref. 4, pp. 294–332.Google Scholar
52. Golecki, I., Nicolet, M.-A., Mäenpää, M., Tandon, J. L, Kirkpatrick, C. G., Sadana, D. K., and Washburn, J. in Ref. 2, pp. 347–353.Google Scholar