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Materials Aspects of Diamond-Based Electronic Devices

Published online by Cambridge University Press:  21 February 2011

J. R. Zeidler ,
C. A. Hewett  and
R. Nguyen
J. R. Zeidler
Affiliation:
NCCOSC RDTE DIV 804, 53570 Silvergate Ave. RM 2070, San Diego, CA 92152–5070.
C. A. Hewett
Affiliation:
NCCOSC RDTE DIV 555, 49285 Bennett ST. RM 111, San Diego, CA 92152–5791.
R. Nguyen
Affiliation:
NCCOSC RDTE DIV 555, 49285 Bennett ST. RM 111, San Diego, CA 92152–5791.
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Abstract

An overview of enabling materials technologies required for fabrication of electronic devices on diamond is presented. Emphasis is placed on electronic doping of diamond by boron ion implantation. Van der Pauw resistivity and Hall Effect measurements were used to determine the net carrier concentration, carrier mobility and resistivity of natural and synthetic diamonds implanted under various conditions. The measured results for a range of implantation conditions and post-annealing temperatures are discussed in the context cf a model developed by J.F. Prins1. The requirements placed on ohmic contacts to diamond, and a process for fabricating ohmic contacts, is discussed briefly. Finally, current-voltage characteristics of a simple MISFET fabricated on ion implanted natural diamond are presented and analyzed. 1J.F. Prins, Physical Review B, 38 (1988) 5576.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 97
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Prins, J.F., Phys. Rev. B, 38, 5576 (1988).Google Scholar
2 Prins, J.F., Phys. Rev. B, 44, 2470 (1991).Google Scholar
3 Prins, J.F., Nuc. Instr. and Meth., B59, 1387 (1991).Google Scholar
4 Prins, J.F., Phys. Rev. B, 39, 3764 (1989).Google Scholar
5 Sandhu, G.S., Swanson, M.L., and Chu, W.K., Appl. Phys. Lett. 55, 1397 (1989).Google Scholar
6 Kiehl, R.A., Hallali, P.E., Yates, J., Tischler, M.A., Potemski, R.M., and Cardone, F., IEEE Electron Device Lett, 12, 530 (1991).Google Scholar
7 Moazed, K.L., Zeidler, J.R., and Taylor, M.J., J. Appl. Phys., 68, 2246 (1990).Google Scholar
8 Zeidler, J.R., Hewett, C.A., and Wilson, R.G., Phys. Rev. B, 47, 2065 (1993).Google Scholar
9 Spits, R.A., Deny, T.E., Prins, J.F., and Sellschop, J.P.F., Nucl. Instr. and Meth. B59/60, 1366 (1991).Google Scholar
10 Collins, A.T. and Lightowlers, E.C., in The Properties of Diamond, edited by Field, J.E. (Academic Press: New York, 1979), pp 79–109.Google Scholar
11 Collins, A.T. and Williams, A.W.S., J. Phys. C: Solid St. Phys., 4, 1789 (1971).Google Scholar
12 Fujimori, N., Nakahata, H., and Imai, T., Jap. J. Appl. Phys., 29(5), 824 (1990).Google Scholar
13 Baranskii, P.I., Malogolovets, V.G., Torishnii, V.I., and Chipenko, G.V., Sov. Phys. Semicond., 21(1), 45 (1987).Google Scholar
14 Vavilov, V.S., Gusasyan, M.A., Guseva, M.I., Karatygina, T.A., and Konorova, E.A., Sov. Phys. Semicond., 8(4), 471 (1974).Google Scholar
15 Prins, J.F., Materials Science Reports, 7, 271 (1992).Google Scholar
16 Cohen, S.S. and Gildenblat, G. Sh., in VLSI Electronics Microstructure Science, Vol.13, ed. Einspruch, N.G., Academic Press, Inc., New York, pp. 87–133 (1986).Google Scholar
17 Ting, C.-Y. and Chen, C.Y., Solid-State Electronics, 14, 433–438 (1971).Google Scholar
18 Berger, H.H., Solid-State Electronics, 15, 145–158 (1972).Google Scholar
19 Cox, R.H. and Strack, H., Solid-State Electronics, 10, 1213–1218 (1967).Google Scholar
20 Reeves, G.K., Solid-State Electronics, 23, 487–490 (1980).Google Scholar
21 Gildenblat, G. Sh., Grot, S.A., Hatfield, C.W., and Badzian, A.R., IEEE Elect. Dev. Lett., 12, 37 (1991).Google Scholar
22 Zeisse, C.R., Hewett, C.A., Nguyen, R., Zeidler, J.R., and Wilson, R.G., IEEE Elect. Dev. Lett., 12, 602 (1991).Google Scholar
23 Zeidler, J.R., Hewett, C.A., Nguyen, R., Zeisse, C.R., and Wilson, R.G., Diamond and Related Materials, 2, 1341 (1993).Google Scholar