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MBE Growth and Characterization of SxGe1−x Multilayer Structures on Si (100) for Use as a Substrate for GaAs Heteroepitaxy

Published online by Cambridge University Press:  22 February 2011

J. B. Posthill ,
D. P. Malta ,
R. Venkatasubramanian ,
P. R. Sharps ,
M. L. Timmons ,
R. J. Markunas ,
T. P. Humphreys  and
N. R. Parikh
J. B. Posthill
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709–2194
D. P. Malta
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709–2194
R. Venkatasubramanian
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709–2194
P. R. Sharps
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709–2194
M. L. Timmons
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709–2194
R. J. Markunas
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709–2194
T. P. Humphreys
Affiliation:
Dept. of Physics, North Carolina State University, Raleigh, NC 27695–8202
N. R. Parikh
Affiliation:
Dept. of Physics & Astronomy, Univ. of North Carolina, Chapel Hill, NC 27599–3255
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Abstract

Investigation has continued into the use of SixGe1−x multilayer structures (MLS) as a buffer layer between a Si substrate and a GaAs epitaxial layer in order to accommodate the 4.1% lattice mismatch. SixGe1−x 4-layer and 5-layer structures terminating in pure Ge have been grown using molecular beam epitaxy. Subsequent GaAs heteroepitaxy has allowed evaluation of these various GaAs/SixGe1−xMLS/Si (100) structures. Antiphase domain boundaries have been eliminated using vicinal Si (100) substrates tilted 6° off-axis toward [011], and the etch pit density in GaAs grown on a 5-layer SixGe1−x MLS on vicinal Si (lOO) was measured to be 106 cm−2.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 265
Copyright
Copyright © Materials Research Society 1991

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References

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