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MBE Growth of Mercury Cadmium Telluride: Issues and Practical Solutions

Published online by Cambridge University Press:  25 February 2011

J. W. Cook Jr. ,
K. A. Harris  and
J. F. Schetzina
J. W. Cook Jr.
Affiliation:
North Carolina State University, Department of Physics, Raleigh, NC 27695-8202
K. A. Harris
Affiliation:
North Carolina State University, Department of Physics, Raleigh, NC 27695-8202
J. F. Schetzina
Affiliation:
North Carolina State University, Department of Physics, Raleigh, NC 27695-8202
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Abstract

The growth of thin films of mercury-based materials by molecular beam epitaxy (MBE) presents significant experimental problems which must be overcome in order to successfully grow infrared detector materials such as mercury cadmium telluride (MCT). Many of the problems associated with the use of Hg in MBE arise from its high room temperature vapor pressure (2 mTorr) and its low sticking coefficient. The MBE system must be designed for Hg usage by considering such things as the ultra high vacuum pumping system, the Hg source, Hg containment, and Hg removal. In addition, Hg is a toxic heavy metal and must be handled appropriately. Other problems involved with the growth of MCT are associated with the design of the MBE furnaces which are used to evaporate cadmium telluride and tellurium.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 419
Copyright
Copyright © Materials Research Society 1987

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References

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