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The Measurement of Boron at Silicon Wafer Surfaces by Neutron Depth Profiling

Published online by Cambridge University Press:  21 February 2011

R.G. Downing ,
J.P. Lavine ,
T.Z. Hossain ,
J.B. Russell  and
G.P. Zenner
R.G. Downing
Affiliation:
Center for Analytical Chemistry, National Institute of Standards and Technology, Gaithersburg, MD 20899
J.P. Lavine
Affiliation:
Research Laboratories, Eastman Kodak Company, Rochester, NY 14650-2008
T.Z. Hossain
Affiliation:
Research Laboratories, Eastman Kodak Company, Rochester, NY 14650-2008
J.B. Russell
Affiliation:
Research Laboratories, Eastman Kodak Company, Rochester, NY 14650-2008
G.P. Zenner
Affiliation:
Research Laboratories, Eastman Kodak Company, Rochester, NY 14650-2008
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Abstract

The thermal neutron reaction 10B(n,α)7Li is used to measure the boron concentration on the surface of silicon wafers. The technique, referred to as neutron depth profiling (NDP), requires no special sample preparation. Boron is determined on the as- received wafers at a level of 1012 to 1013 atoms/cm2. A boron level of about 2×1012 atoms/cm2 is found at the wafer surface after oxidation, epitaxial, or polycrystalline silicon deposition. Additional measurements are given from SIMS measurements of multilayer structures on silicon also showing the presence of boron. Ambient air appears to be a significant source of the boron.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 166: Symposium J – Neutron Scattering for Materials Science , 1989 , 323
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Workshop on the Utilization of Cold Neutron Beams for Prompt Gamma Activation Analysis (PGNAA) and Neutron Depth Profiling (NDP), Rockville, MD, May 22–23, 1989.Google Scholar
2. Proceeding of the American Nuclear Society Winter Meeting, November 15-19, 1987, Los Angeles, CA, Materials Characterization Using Neutron Depth Profiling, 55, 207 (1987).Google Scholar
3. Downing, R.G., Maki, J.T., and Fleming, R.F., in Microelectronics Processing: Inorganic Materials Characterization, edited by Casper, L.A. (ACS Symposium Series No. 295, Washington, D.C., 1986) p. 163.CrossRefGoogle Scholar
4. Liehr, M., Renier, M., Wachnik, R.A., and Scilla, G.S., J. Appl. Phys. 61, 4619 (1987).Google Scholar
5. Slusser, G.J. and MacDowell, L., J. Vac. Sci. Technol. A5, 1649 (1987).Google Scholar
6. Yang, H.T. and Mooney, P.M., J. Appl. Phys. 58, 1854 (1985).Google Scholar
7. Iyer, S.S., Delage, S.L., and Scilla, G.J., Appl. Phys, Lett. 52, 486 (1988).Google Scholar
8. Kubiak, R.A.A., Leong, W.Y., Dowsett, M.G., McPhail, D.S., Houghton, R., and Parker, E.H.C., J. Vac. Sci. Technol A4, 1905 (1986).CrossRefGoogle Scholar
9. Casel, A., Kasper, E., Kibbel, H., and Sasse, E., J. Vac. Sci. Technol. B5, 1650 (1987).CrossRefGoogle Scholar
10. Robbins, D.J., Pidduck, A.J., Glasper, J.L., and Young, I.M., Appl. Phys. Lett. 55, 1229 (1989).CrossRefGoogle Scholar
11. Grunthaner, P.J., Grunthaner, F.J., Fathauer, R.W., Lin, T.L., Schowengerdt, F.D., Pate, B., and Mazur, J.H., in Proceedings of the 2nd International Symposium on Silicon MBE, edited by Bean, J.C. and Schowalter, L.J. (Electrochemical Society, Pennington, N.J. 1988), Vol. 88–8, p. 375.Google Scholar
12. Maki, J.T., Fleming, R.F., and Vincent, D.H., Nucl. Instr. Meth. B17, 147 (1986).CrossRefGoogle Scholar
13. Downing, R.G., Fleming, R.F., Langland, J.K., and Vincent, D.H., Nucl. Instr. Meth. Phys. Res. 218, 47, 1983.Google Scholar
14. Takami, K., Iwamoto, Y., Craven, R.A., and Shaw, R.W., Abstract 3-p ZG-8, Spring 1989 Meeting of the Japanese Society for Applied Physics.Google Scholar
15. Kitto, M.E., Receptor Modelling of Atmospheric Particles and Acidic Gases, Ph.D. dissertation, University of Maryland (1987).Google Scholar
16. Kitto, M.E. and Anderson, D.L., in The Chemistry of Acid Rain: Sources and Atmospheric Processes, edited by Johnson, R.W., Gordon, G.E., Calkins, W., and Elzermann, A., ACS Symposium Series (American Chemical Society, Washington, D.C., 1987), pp. 84–92.Google Scholar