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Measurement of Mobility Profile in GaAs MESFET's by Schottky Barrier Technique with Gate Current Correction

Published online by Cambridge University Press:  26 February 2011

Xiang Qi ,
Wang Lichun  and
Luo Jinsheng
Xiang Qi
Affiliation:
Microelectronics Technology Division, Xi'an Jiaotong University, Xi'an, Shaanxi, China
Wang Lichun
Affiliation:
Microelectronics Technology Division, Xi'an Jiaotong University, Xi'an, Shaanxi, China
Luo Jinsheng
Affiliation:
Microelectronics Technology Division, Xi'an Jiaotong University, Xi'an, Shaanxi, China
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Abstract

The mobility profile of electrons in active layer of GaAs MESFET has an inportant effect on the device performance. The mobilities at layers of different depth can be measured by changing the negative gate bias, but the electron mobility near the surface can't be measured yet due to the depletion of electrons in the surface layer. This paper introduces a differential d.c. equivalent model, in which the Schottky barrier can be forward biased and the gate current correction is properly included. Applying this model, we can precisely calculate the drift and gecmetrical magnetic resistance mobilities very close to the surface layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 625
Copyright
Copyright © Materials Research Society 1989

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References

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