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Measurement of Stress Relaxation in Thin Aluminum Metallizations by Continuous Indentation and X-Ray Techniques

Published online by Cambridge University Press:  16 February 2011

M. A. Korhonen ,
W. R. LaFontaine ,
C. A. Paszkiet ,
R. D. Black  and
Che-Yu Li
M. A. Korhonen
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
W. R. LaFontaine
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
C. A. Paszkiet
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
R. D. Black
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Che-Yu Li
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
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Abstract

Thin aluminum films deposited on silicon substrates are representative of materials systems used in integrated circuit technology. Large stresses in such systems usually arise from thermal expansion mismatch between the thin film and the substrate, and constitute an important reliability concern.

X-ray and continuous indentation testing were used to measure post-heat treatment stresses in a 0.3 μm thick aluminum film on a silicon substrate. The sample was heat treated at 450°C for one hour in an inert atmosphere, after which the stress relaxation was followed as a function of time. The stress data gathered by the two techniques agree very closely during a time span of about 100 hours.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 188: Symposium K – Thin Films: Stresses and Mechanical Properties II , 1990 , 159
Copyright
Copyright © Materials Research Society 1990

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References

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